JPS5730337A - Formation of surface protecting film for semiconductor - Google Patents

Formation of surface protecting film for semiconductor

Info

Publication number
JPS5730337A
JPS5730337A JP10452680A JP10452680A JPS5730337A JP S5730337 A JPS5730337 A JP S5730337A JP 10452680 A JP10452680 A JP 10452680A JP 10452680 A JP10452680 A JP 10452680A JP S5730337 A JPS5730337 A JP S5730337A
Authority
JP
Japan
Prior art keywords
semiconductor
film
protecting film
insulating film
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10452680A
Other languages
Japanese (ja)
Other versions
JPS6313339B2 (en
Inventor
Toshitaka Torikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10452680A priority Critical patent/JPS5730337A/en
Publication of JPS5730337A publication Critical patent/JPS5730337A/en
Publication of JPS6313339B2 publication Critical patent/JPS6313339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an insulating film of a high minuteness as well as to prevent warp and crack for the subject semiconductor by a method wherein a laser beam or the like is irradiated on the insulating film provided on a semiconductor substrate using a plasma CVD method or a high frequency spattering method. CONSTITUTION:After an Si3N4 film has been formed on the semiconductor substrate 31 using the plasma CVD method or the high frequency spattering method, a part 32' of the Si3N4 film is made more minute than the part 32'', where no electron beam is irradiated, by irradiating an electron beam. As a result, a selective etching can be performed according to the extent of irradiation and also, hydrogen contained in the insulating film can be separated, thereby enabling to prevent the warp and crack, generating on the protecting film and the semiconductor, and the exforiation of the protecting film.
JP10452680A 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor Granted JPS5730337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10452680A JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10452680A JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Publications (2)

Publication Number Publication Date
JPS5730337A true JPS5730337A (en) 1982-02-18
JPS6313339B2 JPS6313339B2 (en) 1988-03-25

Family

ID=14382928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10452680A Granted JPS5730337A (en) 1980-07-30 1980-07-30 Formation of surface protecting film for semiconductor

Country Status (1)

Country Link
JP (1) JPS5730337A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461026A (en) * 1987-09-01 1989-03-08 Nec Corp Manufacture of semiconductor device
JPH0276231A (en) * 1988-09-13 1990-03-15 Toshiba Corp Chemical semiconductor device and manufacture thereof
JP2007134712A (en) * 2005-11-07 2007-05-31 Samsung Electronics Co Ltd Semiconductor device and manufacturing method of the same
JP4818352B2 (en) * 2005-04-01 2011-11-16 インターナショナル・ビジネス・マシーンズ・コーポレーション Method for increasing the stress level of a deposited stressor material and method for forming a semiconductor structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556291A (en) * 1978-06-26 1980-01-17 Contraves Ag Digital interporation system for three pahse analog signal period

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS556291A (en) * 1978-06-26 1980-01-17 Contraves Ag Digital interporation system for three pahse analog signal period

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461026A (en) * 1987-09-01 1989-03-08 Nec Corp Manufacture of semiconductor device
JPH0276231A (en) * 1988-09-13 1990-03-15 Toshiba Corp Chemical semiconductor device and manufacture thereof
JP4818352B2 (en) * 2005-04-01 2011-11-16 インターナショナル・ビジネス・マシーンズ・コーポレーション Method for increasing the stress level of a deposited stressor material and method for forming a semiconductor structure
JP2007134712A (en) * 2005-11-07 2007-05-31 Samsung Electronics Co Ltd Semiconductor device and manufacturing method of the same

Also Published As

Publication number Publication date
JPS6313339B2 (en) 1988-03-25

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