JPS56114333A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56114333A
JPS56114333A JP1680680A JP1680680A JPS56114333A JP S56114333 A JPS56114333 A JP S56114333A JP 1680680 A JP1680680 A JP 1680680A JP 1680680 A JP1680680 A JP 1680680A JP S56114333 A JPS56114333 A JP S56114333A
Authority
JP
Japan
Prior art keywords
sio2
substrate
thermally treated
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1680680A
Other languages
Japanese (ja)
Inventor
Haruhide Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1680680A priority Critical patent/JPS56114333A/en
Publication of JPS56114333A publication Critical patent/JPS56114333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To compact SiO2 film in a short time without influencing on an Si substrate by irradiating by CO2 lasers an SiO2 film on the substrate thermally treated after impurities are introduced. CONSTITUTION:Impurities are introduced to an Si substrate, the substrate is thermally treated and SiO2 is deposited by means of a CVD method. When the SiO2 is irradiated by laser beams, it is changed into compact SiO2. When the SiO2 is thermally treated by particularly using CO2 lasers at that time, injected ions are hardly activated, and the SiO2 can be compacted without influencing on the substrate.
JP1680680A 1980-02-13 1980-02-13 Manufacture of semiconductor device Pending JPS56114333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1680680A JPS56114333A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1680680A JPS56114333A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56114333A true JPS56114333A (en) 1981-09-08

Family

ID=11926386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1680680A Pending JPS56114333A (en) 1980-02-13 1980-02-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56114333A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184732A (en) * 1982-04-23 1983-10-28 Nec Corp Annealing of semiconductor device
JPS6376352A (en) * 1986-09-18 1988-04-06 Fujitsu Ltd Manufacture of semiconductor device
WO1999034431A1 (en) * 1997-12-26 1999-07-08 Seiko Epson Corporation Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184732A (en) * 1982-04-23 1983-10-28 Nec Corp Annealing of semiconductor device
JPS6376352A (en) * 1986-09-18 1988-04-06 Fujitsu Ltd Manufacture of semiconductor device
WO1999034431A1 (en) * 1997-12-26 1999-07-08 Seiko Epson Corporation Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device
EP0966029A1 (en) * 1997-12-26 1999-12-22 Seiko Epson Corporation Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device
EP0966029A4 (en) * 1997-12-26 2001-05-09 Seiko Epson Corp Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device
US6407012B1 (en) 1997-12-26 2002-06-18 Seiko Epson Corporation Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device
US6632749B2 (en) 1997-12-26 2003-10-14 Seiko Epson Corporation Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device
KR100489749B1 (en) * 1997-12-26 2005-05-16 미쓰비시덴키 가부시키가이샤 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display, and infrared irradiating device

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