JPS57106180A - Manufacture of mercury cadmium telluride diode - Google Patents

Manufacture of mercury cadmium telluride diode

Info

Publication number
JPS57106180A
JPS57106180A JP55183442A JP18344280A JPS57106180A JP S57106180 A JPS57106180 A JP S57106180A JP 55183442 A JP55183442 A JP 55183442A JP 18344280 A JP18344280 A JP 18344280A JP S57106180 A JPS57106180 A JP S57106180A
Authority
JP
Japan
Prior art keywords
diode
wavelength
crystal
cadmium telluride
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55183442A
Other languages
Japanese (ja)
Other versions
JPS6259473B2 (en
Inventor
Yasuo Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55183442A priority Critical patent/JPS57106180A/en
Publication of JPS57106180A publication Critical patent/JPS57106180A/en
Publication of JPS6259473B2 publication Critical patent/JPS6259473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To form the mercury cadmium telluride diode by selectively iradiating high output beams having a wavelength the same as or shorter than a wavelength of an absorbing end of an N type HgCdTe crystal having excessive Hg onto the surface of the crystal and changing an irradiating region into a P type. CONSTITUTION:When shielding masks 2 are shaped onto the HgCdTe crystal and the high output laser beams having the wavelength shorter than the wavelength of the absorbing end of the crystal are selectively irradiated in a short time (1-100ns), the irradiating regions 4 are turned into the P type. Accordingly, the matrix-shaped diode can be formed with high density.
JP55183442A 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode Granted JPS57106180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183442A JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183442A JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Publications (2)

Publication Number Publication Date
JPS57106180A true JPS57106180A (en) 1982-07-01
JPS6259473B2 JPS6259473B2 (en) 1987-12-11

Family

ID=16135835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183442A Granted JPS57106180A (en) 1980-12-24 1980-12-24 Manufacture of mercury cadmium telluride diode

Country Status (1)

Country Link
JP (1) JPS57106180A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110931577A (en) * 2019-11-11 2020-03-27 中国科学院上海技术物理研究所 Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450998U (en) * 1987-09-25 1989-03-29
JPH0824098A (en) * 1994-07-20 1996-01-30 Hakohide Shiki Seisakusho:Kk Constitutional member for picture frame, picture frame using the same and their manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110931577A (en) * 2019-11-11 2020-03-27 中国科学院上海技术物理研究所 Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption
CN110931577B (en) * 2019-11-11 2021-12-31 中国科学院上海技术物理研究所 Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption

Also Published As

Publication number Publication date
JPS6259473B2 (en) 1987-12-11

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