JPS5311589A - Diffraction grating coupling type semiconductor laser - Google Patents

Diffraction grating coupling type semiconductor laser

Info

Publication number
JPS5311589A
JPS5311589A JP8561576A JP8561576A JPS5311589A JP S5311589 A JPS5311589 A JP S5311589A JP 8561576 A JP8561576 A JP 8561576A JP 8561576 A JP8561576 A JP 8561576A JP S5311589 A JPS5311589 A JP S5311589A
Authority
JP
Japan
Prior art keywords
diffraction grating
type semiconductor
semiconductor laser
coupling type
grating coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8561576A
Other languages
Japanese (ja)
Inventor
Yutaka Uematsu
Motoyuki Yamamoto
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8561576A priority Critical patent/JPS5311589A/en
Publication of JPS5311589A publication Critical patent/JPS5311589A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase output and differentiation quantum efficiency by structurally isolating an active layer and an optical guide layer and providing diffraction grating to the optical guide layer.
JP8561576A 1976-07-20 1976-07-20 Diffraction grating coupling type semiconductor laser Pending JPS5311589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8561576A JPS5311589A (en) 1976-07-20 1976-07-20 Diffraction grating coupling type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8561576A JPS5311589A (en) 1976-07-20 1976-07-20 Diffraction grating coupling type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5311589A true JPS5311589A (en) 1978-02-02

Family

ID=13863738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8561576A Pending JPS5311589A (en) 1976-07-20 1976-07-20 Diffraction grating coupling type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5311589A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5542393U (en) * 1978-09-14 1980-03-18
US4194162A (en) * 1977-04-06 1980-03-18 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
US4886749A (en) * 1986-05-28 1989-12-12 Unitika Ltd. Process for producing diadenosine tetraphosphate and derivatives thereof
US6991634B2 (en) 2001-05-23 2006-01-31 Pentax Corporation Clip device of endoscope

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194162A (en) * 1977-04-06 1980-03-18 Tokyo Shibaura Electric Co., Ltd. Semiconductor device
JPS5542393U (en) * 1978-09-14 1980-03-18
US4886749A (en) * 1986-05-28 1989-12-12 Unitika Ltd. Process for producing diadenosine tetraphosphate and derivatives thereof
US6991634B2 (en) 2001-05-23 2006-01-31 Pentax Corporation Clip device of endoscope

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