JPS5214392A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5214392A
JPS5214392A JP9061375A JP9061375A JPS5214392A JP S5214392 A JPS5214392 A JP S5214392A JP 9061375 A JP9061375 A JP 9061375A JP 9061375 A JP9061375 A JP 9061375A JP S5214392 A JPS5214392 A JP S5214392A
Authority
JP
Japan
Prior art keywords
semiconductor laser
wavelength
fluctuation
enables
avoid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9061375A
Other languages
Japanese (ja)
Other versions
JPS536516B2 (en
Inventor
Kenji Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9061375A priority Critical patent/JPS5214392A/en
Publication of JPS5214392A publication Critical patent/JPS5214392A/en
Publication of JPS536516B2 publication Critical patent/JPS536516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make possible the light emission with the narrow width of wavelength and to avoid the fluctuation of wavelength by using the structure, which enables to form grating on wave guide layer.
JP9061375A 1975-07-24 1975-07-24 Semiconductor laser Granted JPS5214392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9061375A JPS5214392A (en) 1975-07-24 1975-07-24 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9061375A JPS5214392A (en) 1975-07-24 1975-07-24 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5214392A true JPS5214392A (en) 1977-02-03
JPS536516B2 JPS536516B2 (en) 1978-03-08

Family

ID=14003322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9061375A Granted JPS5214392A (en) 1975-07-24 1975-07-24 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5214392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532632A (en) * 1981-07-31 1985-07-30 Omron Tateisi Electronics Co. Tunable semiconductor laser

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102152156B1 (en) 2017-12-01 2020-09-04 국방과학연구소 Positioning apparatus and method therefore

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532632A (en) * 1981-07-31 1985-07-30 Omron Tateisi Electronics Co. Tunable semiconductor laser

Also Published As

Publication number Publication date
JPS536516B2 (en) 1978-03-08

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