GB1547180A - Semiconductor laser with light guide - Google Patents

Semiconductor laser with light guide

Info

Publication number
GB1547180A
GB1547180A GB50534/76A GB5053476A GB1547180A GB 1547180 A GB1547180 A GB 1547180A GB 50534/76 A GB50534/76 A GB 50534/76A GB 5053476 A GB5053476 A GB 5053476A GB 1547180 A GB1547180 A GB 1547180A
Authority
GB
United Kingdom
Prior art keywords
light guide
semiconductor laser
laser
semiconductor
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50534/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1547180A publication Critical patent/GB1547180A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
GB50534/76A 1975-12-05 1976-12-03 Semiconductor laser with light guide Expired GB1547180A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50145720A JPS5269285A (en) 1975-12-05 1975-12-05 Semiconductor laser device

Publications (1)

Publication Number Publication Date
GB1547180A true GB1547180A (en) 1979-06-06

Family

ID=15391559

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50534/76A Expired GB1547180A (en) 1975-12-05 1976-12-03 Semiconductor laser with light guide

Country Status (4)

Country Link
US (1) US4144503A (en)
JP (1) JPS5269285A (en)
CA (1) CA1067989A (en)
GB (1) GB1547180A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7903197A (en) * 1979-04-24 1980-10-28 Philips Nv METHOD FOR MANUFACTURING AN ELECTROLUMINESCENT SEMICONDUCTOR DEVICE AND ELECTROLUMINESCENT SEMICONDUCTOR DEVICE MADE ACCORDING TO THE METHOD
JPS58140177A (en) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> Distributed feed-back type semiconductor laser
US4464762A (en) * 1982-02-22 1984-08-07 Bell Telephone Laboratories, Incorporated Monolithically integrated distributed Bragg reflector laser
JPS59143109A (en) * 1983-02-04 1984-08-16 Sumitomo Electric Ind Ltd Optical integrated circuit
US4758092A (en) * 1986-03-04 1988-07-19 Stanford University Method and means for optical detection of charge density modulation in a semiconductor
US4804639A (en) * 1986-04-18 1989-02-14 Bell Communications Research, Inc. Method of making a DH laser with strained layers by MBE
US4933302A (en) * 1989-04-19 1990-06-12 International Business Machines Corporation Formation of laser mirror facets and integration of optoelectronics
JPH04145414A (en) * 1990-10-08 1992-05-19 Fujitsu Ltd Optical waveguide type wavelength filter
US5872360A (en) * 1996-12-12 1999-02-16 Intel Corporation Method and apparatus using an infrared laser based optical probe for measuring electric fields directly from active regions in an integrated circuit
US5904486A (en) * 1997-09-30 1999-05-18 Intel Corporation Method for performing a circuit edit through the back side of an integrated circuit die
US6072179A (en) * 1998-08-07 2000-06-06 Intel Corporation Method and apparatus using an infrared laser based optical probe for measuring voltages directly from active regions in an integrated circuit
US7602828B2 (en) * 2006-11-13 2009-10-13 Jds Uniphase Corporation Semiconductor laser diode with narrow lateral beam divergence

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2152464B1 (en) * 1971-09-16 1974-05-31 Thomson Csf
US3968564A (en) * 1975-04-30 1976-07-13 Northern Electric Company Limited Alignment of optical fibers to light emitting diodes

Also Published As

Publication number Publication date
JPS5269285A (en) 1977-06-08
CA1067989A (en) 1979-12-11
US4144503A (en) 1979-03-13

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931203