JPS5270991A - Gas phase reactor by use of laser - Google Patents

Gas phase reactor by use of laser

Info

Publication number
JPS5270991A
JPS5270991A JP14703975A JP14703975A JPS5270991A JP S5270991 A JPS5270991 A JP S5270991A JP 14703975 A JP14703975 A JP 14703975A JP 14703975 A JP14703975 A JP 14703975A JP S5270991 A JPS5270991 A JP S5270991A
Authority
JP
Japan
Prior art keywords
gas phase
laser
phase reactor
instrument
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14703975A
Other languages
Japanese (ja)
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14703975A priority Critical patent/JPS5270991A/en
Publication of JPS5270991A publication Critical patent/JPS5270991A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Abstract

PURPOSE:To develop an instrument which enables gas phase growth of a insulating film locally on the surface of a smeiconductor element tip by the irradiation of a laser light beam, the instrument being so constructed as to inject a reactive gas onto the surface of a semiconductor tip.
JP14703975A 1975-12-10 1975-12-10 Gas phase reactor by use of laser Pending JPS5270991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14703975A JPS5270991A (en) 1975-12-10 1975-12-10 Gas phase reactor by use of laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14703975A JPS5270991A (en) 1975-12-10 1975-12-10 Gas phase reactor by use of laser

Publications (1)

Publication Number Publication Date
JPS5270991A true JPS5270991A (en) 1977-06-13

Family

ID=15421127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14703975A Pending JPS5270991A (en) 1975-12-10 1975-12-10 Gas phase reactor by use of laser

Country Status (1)

Country Link
JP (1) JPS5270991A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127840A (en) * 1983-01-13 1984-07-23 Toshiba Corp Deposition of organic film and device therefor
JPS6094728A (en) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd Processing device using charged particle beam
JPS6114640A (en) * 1984-06-20 1986-01-22 グールド・インコーポレイテツド Method and apparatus for correcting defect of photo mask
JPS6125146A (en) * 1984-07-13 1986-02-04 Hitachi Ltd Correcting method of defect of photomask
JPS61123842A (en) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd Method for feeding compound vapor in mask repairing device
JPS61127125A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Method for correcting defect of photomask
JPS6283749A (en) * 1985-10-08 1987-04-17 Mitsubishi Electric Corp Correcting method defect for of photomask
FR2594529A1 (en) * 1986-02-19 1987-08-21 Bertin & Cie APPARATUS FOR THE THERMAL TREATMENT OF THIN PIECES, SUCH AS SILICON PLATES
JPH03120819A (en) * 1989-10-04 1991-05-23 Nec Corp Laser cvd equipment

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127840A (en) * 1983-01-13 1984-07-23 Toshiba Corp Deposition of organic film and device therefor
JPH0320897B2 (en) * 1983-01-13 1991-03-20 Tokyo Shibaura Electric Co
JPH0132494B2 (en) * 1983-10-27 1989-07-04 Seiko Denshi Kogyo Kk
JPS6094728A (en) * 1983-10-27 1985-05-27 Seiko Instr & Electronics Ltd Processing device using charged particle beam
JPS6114640A (en) * 1984-06-20 1986-01-22 グールド・インコーポレイテツド Method and apparatus for correcting defect of photo mask
JPS6125146A (en) * 1984-07-13 1986-02-04 Hitachi Ltd Correcting method of defect of photomask
JPS61123842A (en) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd Method for feeding compound vapor in mask repairing device
JPS61127125A (en) * 1984-11-26 1986-06-14 Hitachi Ltd Method for correcting defect of photomask
JPH0558187B2 (en) * 1984-11-26 1993-08-25 Hitachi Ltd
JPS6283749A (en) * 1985-10-08 1987-04-17 Mitsubishi Electric Corp Correcting method defect for of photomask
JPH0458624B2 (en) * 1985-10-08 1992-09-18 Mitsubishi Electric Corp
FR2594529A1 (en) * 1986-02-19 1987-08-21 Bertin & Cie APPARATUS FOR THE THERMAL TREATMENT OF THIN PIECES, SUCH AS SILICON PLATES
JPH03120819A (en) * 1989-10-04 1991-05-23 Nec Corp Laser cvd equipment
JP2518419B2 (en) * 1989-10-04 1996-07-24 日本電気株式会社 Laser CVD equipment

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