JPS5425166A - Vapor-phase growth device - Google Patents
Vapor-phase growth deviceInfo
- Publication number
- JPS5425166A JPS5425166A JP9067977A JP9067977A JPS5425166A JP S5425166 A JPS5425166 A JP S5425166A JP 9067977 A JP9067977 A JP 9067977A JP 9067977 A JP9067977 A JP 9067977A JP S5425166 A JPS5425166 A JP S5425166A
- Authority
- JP
- Japan
- Prior art keywords
- phase growth
- vapor
- growth device
- conveyance
- moving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To attain continuous vapor-phase growth, by moving a substrate under conveyance to a reactor device deviated from its conveyance path.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9067977A JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9067977A JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5425166A true JPS5425166A (en) | 1979-02-24 |
JPS6136369B2 JPS6136369B2 (en) | 1986-08-18 |
Family
ID=14005213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9067977A Granted JPS5425166A (en) | 1977-07-27 | 1977-07-27 | Vapor-phase growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5425166A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125614A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59125613A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1977
- 1977-07-27 JP JP9067977A patent/JPS5425166A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59125614A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59125613A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6136369B2 (en) | 1986-08-18 |
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