JPS5638464A - Formation of nitride film - Google Patents

Formation of nitride film

Info

Publication number
JPS5638464A
JPS5638464A JP11340179A JP11340179A JPS5638464A JP S5638464 A JPS5638464 A JP S5638464A JP 11340179 A JP11340179 A JP 11340179A JP 11340179 A JP11340179 A JP 11340179A JP S5638464 A JPS5638464 A JP S5638464A
Authority
JP
Japan
Prior art keywords
substrate
nitride film
laser beam
semiconductor
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11340179A
Other languages
Japanese (ja)
Other versions
JPS593540B2 (en
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11340179A priority Critical patent/JPS593540B2/en
Publication of JPS5638464A publication Critical patent/JPS5638464A/en
Publication of JPS593540B2 publication Critical patent/JPS593540B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/04—Treatment of selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable a nitriding process for forming a desired nitride film on a semiconductor surface by a method wherein a laser beam is irradiated on the surface of substrate such as semiconductor, etc. in N2 plasma to which a high frequency electromagnetic field is applied so that the surface reacts with N2 plasma. CONSTITUTION:The equipment consists of a laser oscillator 1, a lens 3, a plasma generation chamber 5, gas inlet 6, a high frequency electromagnetic field generator 9, vacuum discharge opening 7, etc. The substrate 4 such as semiconductor or metal is placed in the chamber 5 in nitrogen atmosphere, then a high frequency electromagnetic field is applied so that nitrogen plasma is generated. The laser beam is irradiated on the surface of the substrate 4 so that the substrate surface and N2 are reacted each other to form a normal semiconductor nitride film. Preheating of the substrate 4 by a heater 11 increases the thickness of nitride film when the same laser beam is used. The nitride film with a desired pattern can be formed by irradiating or scanning the laser beam on the substrate surface through a mask.
JP11340179A 1979-09-03 1979-09-03 Nitride film formation method Expired JPS593540B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11340179A JPS593540B2 (en) 1979-09-03 1979-09-03 Nitride film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11340179A JPS593540B2 (en) 1979-09-03 1979-09-03 Nitride film formation method

Publications (2)

Publication Number Publication Date
JPS5638464A true JPS5638464A (en) 1981-04-13
JPS593540B2 JPS593540B2 (en) 1984-01-24

Family

ID=14611354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11340179A Expired JPS593540B2 (en) 1979-09-03 1979-09-03 Nitride film formation method

Country Status (1)

Country Link
JP (1) JPS593540B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS58199857A (en) * 1982-05-04 1983-11-21 マイクル・ポ−ル・ニアリ− Chemical process
JPS6050166A (en) * 1983-08-26 1985-03-19 Res Dev Corp Of Japan Method and device for plasma vapor deposition
JPS60216560A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Formation of nitride film
JPS61119676A (en) * 1984-11-15 1986-06-06 Ulvac Corp Film forming device using sheet plasma and laser light
JPS61131431A (en) * 1984-11-29 1986-06-19 Mitsubishi Electric Corp Semiconductor manufacturing equipment
JPS61196525A (en) * 1985-02-26 1986-08-30 Toshiba Corp Semiconductor epitaxial growth apparatus
US4820046A (en) * 1986-12-01 1989-04-11 Hitachi, Ltd. Spectroscope apparatus and reaction apparatus using the same
JPH02138477A (en) * 1989-07-14 1990-05-28 Hitachi Ltd Method and device for film forming by microwave plasma
WO2001040533A1 (en) * 1999-12-01 2001-06-07 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and installation for selective surface treatment
FR2801905A1 (en) * 1999-12-03 2001-06-08 Air Liquide Selective surface treatment, especially of copper surfaces, used, e.g., in electronic circuit manufacture involves treating a pretreated, mask-covered surface with an excited or unstable gas species

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6322610B2 (en) * 1981-09-21 1988-05-12 Mitsubishi Electric Corp
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS58199857A (en) * 1982-05-04 1983-11-21 マイクル・ポ−ル・ニアリ− Chemical process
JPS6050166A (en) * 1983-08-26 1985-03-19 Res Dev Corp Of Japan Method and device for plasma vapor deposition
JPS60216560A (en) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd Formation of nitride film
JPS61119676A (en) * 1984-11-15 1986-06-06 Ulvac Corp Film forming device using sheet plasma and laser light
JPS61131431A (en) * 1984-11-29 1986-06-19 Mitsubishi Electric Corp Semiconductor manufacturing equipment
JPS61196525A (en) * 1985-02-26 1986-08-30 Toshiba Corp Semiconductor epitaxial growth apparatus
US4820046A (en) * 1986-12-01 1989-04-11 Hitachi, Ltd. Spectroscope apparatus and reaction apparatus using the same
US4973159A (en) * 1986-12-01 1990-11-27 Hitachi, Ltd. Spectroscope apparatus and reaction apparatus using the same
JPH02138477A (en) * 1989-07-14 1990-05-28 Hitachi Ltd Method and device for film forming by microwave plasma
WO2001040533A1 (en) * 1999-12-01 2001-06-07 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Method and installation for selective surface treatment
FR2801905A1 (en) * 1999-12-03 2001-06-08 Air Liquide Selective surface treatment, especially of copper surfaces, used, e.g., in electronic circuit manufacture involves treating a pretreated, mask-covered surface with an excited or unstable gas species

Also Published As

Publication number Publication date
JPS593540B2 (en) 1984-01-24

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