JPS5565428A - Direct formation of thin film pattern - Google Patents
Direct formation of thin film patternInfo
- Publication number
- JPS5565428A JPS5565428A JP13783778A JP13783778A JPS5565428A JP S5565428 A JPS5565428 A JP S5565428A JP 13783778 A JP13783778 A JP 13783778A JP 13783778 A JP13783778 A JP 13783778A JP S5565428 A JPS5565428 A JP S5565428A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film pattern
- carrier gas
- volatile compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form a thin film pattern on the substrate exactly same as what has been formed on the substrate after light irradiation by irradiating light of size and shape required on the substrate when gasifying a volatile compound and when sending it to the substrate by mixing it with a carrier gas.
CONSTITUTION: A susceptor 4 is arranged in a horizontal type reaction chamber 3 having a cross section required, and a silicon substrate 1 is fixed on the susceptor 4. Diborane and phosphine as a volatile compound, and H2 as a carrier gas are used. After mixing the volatile compound with H2 as a carrier gas, the mixture is sent to the reaction chamber 3 from the direction of an arrow at the flowing ratio required. At this time, a laser beam 2 with the wave length required is vertically irradiated on the substrate 1; the beam of the size and shape required is irradiated on the substrate to form the thin film pattern exactly same as what has been formed after light irradiation.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13783778A JPS5565428A (en) | 1978-11-10 | 1978-11-10 | Direct formation of thin film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13783778A JPS5565428A (en) | 1978-11-10 | 1978-11-10 | Direct formation of thin film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5565428A true JPS5565428A (en) | 1980-05-16 |
Family
ID=15207978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13783778A Pending JPS5565428A (en) | 1978-11-10 | 1978-11-10 | Direct formation of thin film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565428A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59140369A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
JPS59140366A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
JPS59163831A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing apparatus therefor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS499589A (en) * | 1972-03-23 | 1974-01-28 | ||
JPS49111585A (en) * | 1973-02-23 | 1974-10-24 |
-
1978
- 1978-11-10 JP JP13783778A patent/JPS5565428A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS499589A (en) * | 1972-03-23 | 1974-01-28 | ||
JPS49111585A (en) * | 1973-02-23 | 1974-10-24 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163831A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Manufacture of semiconductor device and manufacturing apparatus therefor |
JPS59140369A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
JPS59140366A (en) * | 1983-12-27 | 1984-08-11 | Agency Of Ind Science & Technol | Method and device for producing thin film |
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