JPS6481314A - Formation of doping silicon thin film - Google Patents
Formation of doping silicon thin filmInfo
- Publication number
- JPS6481314A JPS6481314A JP24008987A JP24008987A JPS6481314A JP S6481314 A JPS6481314 A JP S6481314A JP 24008987 A JP24008987 A JP 24008987A JP 24008987 A JP24008987 A JP 24008987A JP S6481314 A JPS6481314 A JP S6481314A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- doping
- thin film
- formation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enable the formation of a high accurate minute doping thin film pattern by irradiating gas containing doping material and another gas containing silicon by the use of an electron beam and depositing them on a depositing substrate. CONSTITUTION:Gas molecule 12 containing doping material as a component element and the other gas 13 containing silicon as a component element are absorbed on a substrate 11, absorbed molecule of an irradiated part is dissociated and a doping silicon thin film is formed when an electron beam 15 is irradiated on the substrate 11. Painting is enabled without a mask because of using the electron beam and a pattern forming process is shortened. Further, since dissociation reaction by electron beam excitation surface reaction is used, the temperature of the process is low, and a high accurate minute doping silicon pattern can be formed because the electron beam is 0.1mum or less and easily obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24008987A JPS6481314A (en) | 1987-09-24 | 1987-09-24 | Formation of doping silicon thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24008987A JPS6481314A (en) | 1987-09-24 | 1987-09-24 | Formation of doping silicon thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481314A true JPS6481314A (en) | 1989-03-27 |
Family
ID=17054323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24008987A Pending JPS6481314A (en) | 1987-09-24 | 1987-09-24 | Formation of doping silicon thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481314A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837159A (en) * | 1994-05-16 | 1996-02-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745226A (en) * | 1980-08-30 | 1982-03-15 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
JPS60182354A (en) * | 1984-02-28 | 1985-09-17 | Nippon Denso Co Ltd | Measuring device for injector driving pulse width |
JPS60236213A (en) * | 1984-05-09 | 1985-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor substrate |
JPS60257515A (en) * | 1984-06-04 | 1985-12-19 | Ricoh Co Ltd | Manufacture of thin film |
-
1987
- 1987-09-24 JP JP24008987A patent/JPS6481314A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745226A (en) * | 1980-08-30 | 1982-03-15 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
JPS60182354A (en) * | 1984-02-28 | 1985-09-17 | Nippon Denso Co Ltd | Measuring device for injector driving pulse width |
JPS60236213A (en) * | 1984-05-09 | 1985-11-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor substrate |
JPS60257515A (en) * | 1984-06-04 | 1985-12-19 | Ricoh Co Ltd | Manufacture of thin film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837159A (en) * | 1994-05-16 | 1996-02-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES8500874A1 (en) | Chemical vapor deposition of titanium nitride and like films. | |
KR930022602A (en) | Thin film formation method | |
EP0242207A3 (en) | Process for forming deposited film | |
JPS523583A (en) | Crystal film forming process | |
EP0194109A3 (en) | Method for producing a semiconductor device using a chemical vapour deposition step | |
JPS5358490A (en) | Forming method for film | |
JPS5638464A (en) | Formation of nitride film | |
JPS5249772A (en) | Process for production of semiconductor device | |
JPS6481314A (en) | Formation of doping silicon thin film | |
JPS5270991A (en) | Gas phase reactor by use of laser | |
JPS5351187A (en) | Gas phase chemical evaporation apparatus | |
ES466902A1 (en) | Method of forming a phosphorus-nitrogen-oxygen film on a substrate | |
EP0243074A3 (en) | Process for forming deposited film | |
ATE134070T1 (en) | METHOD FOR PRODUCING A DEPOSITED LAYER AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE | |
JPS5565428A (en) | Direct formation of thin film pattern | |
JPS5718324A (en) | Method of working | |
JPS5423472A (en) | Manufacture for semiconductor device | |
JPS5232671A (en) | Manufacturing process of semiconductor device | |
JPS5688319A (en) | Method for forming film pattern | |
JPS5216989A (en) | Process of semiconductor thin film | |
JPS544567A (en) | Growing apparatus of ion beam crystal | |
JPS52117549A (en) | Film thickness control method for semiconductor film substance | |
JPS5378777A (en) | Semiconductor device | |
JPS53123089A (en) | Production of semiconductor device | |
JPS55158635A (en) | Mask |