JPS6481314A - Formation of doping silicon thin film - Google Patents

Formation of doping silicon thin film

Info

Publication number
JPS6481314A
JPS6481314A JP24008987A JP24008987A JPS6481314A JP S6481314 A JPS6481314 A JP S6481314A JP 24008987 A JP24008987 A JP 24008987A JP 24008987 A JP24008987 A JP 24008987A JP S6481314 A JPS6481314 A JP S6481314A
Authority
JP
Japan
Prior art keywords
electron beam
doping
thin film
formation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24008987A
Other languages
Japanese (ja)
Inventor
Shinji Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24008987A priority Critical patent/JPS6481314A/en
Publication of JPS6481314A publication Critical patent/JPS6481314A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable the formation of a high accurate minute doping thin film pattern by irradiating gas containing doping material and another gas containing silicon by the use of an electron beam and depositing them on a depositing substrate. CONSTITUTION:Gas molecule 12 containing doping material as a component element and the other gas 13 containing silicon as a component element are absorbed on a substrate 11, absorbed molecule of an irradiated part is dissociated and a doping silicon thin film is formed when an electron beam 15 is irradiated on the substrate 11. Painting is enabled without a mask because of using the electron beam and a pattern forming process is shortened. Further, since dissociation reaction by electron beam excitation surface reaction is used, the temperature of the process is low, and a high accurate minute doping silicon pattern can be formed because the electron beam is 0.1mum or less and easily obtained.
JP24008987A 1987-09-24 1987-09-24 Formation of doping silicon thin film Pending JPS6481314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24008987A JPS6481314A (en) 1987-09-24 1987-09-24 Formation of doping silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24008987A JPS6481314A (en) 1987-09-24 1987-09-24 Formation of doping silicon thin film

Publications (1)

Publication Number Publication Date
JPS6481314A true JPS6481314A (en) 1989-03-27

Family

ID=17054323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24008987A Pending JPS6481314A (en) 1987-09-24 1987-09-24 Formation of doping silicon thin film

Country Status (1)

Country Link
JP (1) JPS6481314A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0837159A (en) * 1994-05-16 1996-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745226A (en) * 1980-08-30 1982-03-15 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS60182354A (en) * 1984-02-28 1985-09-17 Nippon Denso Co Ltd Measuring device for injector driving pulse width
JPS60236213A (en) * 1984-05-09 1985-11-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor substrate
JPS60257515A (en) * 1984-06-04 1985-12-19 Ricoh Co Ltd Manufacture of thin film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745226A (en) * 1980-08-30 1982-03-15 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS60182354A (en) * 1984-02-28 1985-09-17 Nippon Denso Co Ltd Measuring device for injector driving pulse width
JPS60236213A (en) * 1984-05-09 1985-11-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor substrate
JPS60257515A (en) * 1984-06-04 1985-12-19 Ricoh Co Ltd Manufacture of thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0837159A (en) * 1994-05-16 1996-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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