JPS5688319A - Method for forming film pattern - Google Patents
Method for forming film patternInfo
- Publication number
- JPS5688319A JPS5688319A JP16601979A JP16601979A JPS5688319A JP S5688319 A JPS5688319 A JP S5688319A JP 16601979 A JP16601979 A JP 16601979A JP 16601979 A JP16601979 A JP 16601979A JP S5688319 A JPS5688319 A JP S5688319A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- laser light
- film pattern
- metallic coating
- upper portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a film pattern having excellent productivity in a complete dry process by providing a mask with a metallic coating film on the upper portion of the metallic coating layer formed on a substrate, and by irradiating the laser light on the mask from the upper portion. CONSTITUTION:The mask 60 comprising the metal coating film 40 such as gold, chromium, and the like and a base material 5 such as glass and the like is arranged on the metallic coating layer 2 such as tin oxide and the like which is deposited on the insulating substrate 1 such as glass and the like. Then, from the upper portion over said mask 60, is scanned and irradiated the laser light 7 which is focused by a required optical system. Since the metallic coating film 40 deposited on the mask 60 reflects the laser light and the base material 5 passes the laser light, the required part in the coating layer 2 is evaporated, and a film pattern 20 which is exactly the same as the mask pattern is formed. In this method the film pattern whose productivity is excellent can be formed by simple process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601979A JPS5688319A (en) | 1979-12-19 | 1979-12-19 | Method for forming film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601979A JPS5688319A (en) | 1979-12-19 | 1979-12-19 | Method for forming film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688319A true JPS5688319A (en) | 1981-07-17 |
Family
ID=15823402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16601979A Pending JPS5688319A (en) | 1979-12-19 | 1979-12-19 | Method for forming film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688319A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0473766A (en) * | 1990-07-16 | 1992-03-09 | Toshiba Corp | Proximity exposure device |
WO2000069219A1 (en) * | 1999-05-07 | 2000-11-16 | Ibiden Co., Ltd. | Hot plate and method of producing the same |
JP2008078634A (en) * | 2006-08-25 | 2008-04-03 | Semiconductor Energy Lab Co Ltd | Method of producing semiconductor device |
US20110195352A1 (en) * | 2010-02-11 | 2011-08-11 | Do-Young Kim | Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same |
-
1979
- 1979-12-19 JP JP16601979A patent/JPS5688319A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0473766A (en) * | 1990-07-16 | 1992-03-09 | Toshiba Corp | Proximity exposure device |
WO2000069219A1 (en) * | 1999-05-07 | 2000-11-16 | Ibiden Co., Ltd. | Hot plate and method of producing the same |
US6967313B1 (en) | 1999-05-07 | 2005-11-22 | Ibiden Company, Ltd. | Hot plate and method of producing the same |
JP2008078634A (en) * | 2006-08-25 | 2008-04-03 | Semiconductor Energy Lab Co Ltd | Method of producing semiconductor device |
US20110195352A1 (en) * | 2010-02-11 | 2011-08-11 | Do-Young Kim | Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same |
US8785081B2 (en) * | 2010-02-11 | 2014-07-22 | Samsung Display Co., Ltd. | Mask for laser induced thermal imaging and method of fabricating organic electro-luminescence display device using the same |
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