UST988007I4 - Laser deposition of metal upon transparent materials - Google Patents

Laser deposition of metal upon transparent materials Download PDF

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Publication number
UST988007I4
UST988007I4 US06/009,704 US970479A UST988007I4 US T988007 I4 UST988007 I4 US T988007I4 US 970479 A US970479 A US 970479A US T988007 I4 UST988007 I4 US T988007I4
Authority
US
United States
Prior art keywords
metal
substrate
laser beam
transparent
redeposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US06/009,704
Inventor
Roland F. Drew
Frank J. Schmidt, Jr.
Thomas J. Vanduynhoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US06/009,704 priority Critical patent/UST988007I4/en
Application granted granted Critical
Publication of UST988007I4 publication Critical patent/UST988007I4/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention contemplates a method and apparatus for selectively depositing metal or other materials upon a transparent substrate utilizing a laser source. More particularly, the invention contemplates depositing material in highly selective areas with a high degree of adhesion and uniformity.
The invention attains these results with an arrangement wherein a laser source 12 is located on one side of a transparent or translucent substrate 18 upon which metal is to be deposited, so that the laser beam can be directed through the substrate. A reservoir 20 of metal is located on supports 24 on the opposite side of the substrate adjacent to the surface thereof. Deflection means 14, 16 are provided to selectively scan the laser beam at predetermined intensity levels over a desired pattern.
The scanned laser beam acts to heat and vaporize metal from the metal reservoir, which is then redeposited upon the adjacent surface of the glass substrate. It has been found that with transparent substrates, metal and particularly conductive metal can be redeposited upon one surface thereof using this method with a high degree of adhesion and uniformity.
US06/009,704 1977-12-21 1979-02-05 Laser deposition of metal upon transparent materials Pending UST988007I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/009,704 UST988007I4 (en) 1977-12-21 1979-02-05 Laser deposition of metal upon transparent materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86279777A 1977-12-21 1977-12-21
US06/009,704 UST988007I4 (en) 1977-12-21 1979-02-05 Laser deposition of metal upon transparent materials

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US86279777A Continuation 1977-12-21 1977-12-21

Publications (1)

Publication Number Publication Date
UST988007I4 true UST988007I4 (en) 1979-11-06

Family

ID=26679797

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/009,704 Pending UST988007I4 (en) 1977-12-21 1979-02-05 Laser deposition of metal upon transparent materials

Country Status (1)

Country Link
US (1) UST988007I4 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4895735A (en) 1988-03-01 1990-01-23 Texas Instruments Incorporated Radiation induced pattern deposition
US5173441A (en) * 1991-02-08 1992-12-22 Micron Technology, Inc. Laser ablation deposition process for semiconductor manufacture
US5492861A (en) * 1992-09-03 1996-02-20 Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V. Process for applying structured layers using laser transfer
US6419998B1 (en) 2000-06-19 2002-07-16 Mcgrath Thomas Method for deposition of metal catalysts on inert supports
US6709720B2 (en) 1997-03-21 2004-03-23 Kabushiki Kaisha Yaskawa Denki Marking method and marking material
US20100000466A1 (en) * 2006-04-17 2010-01-07 Imra America, Inc. P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
US20100155374A1 (en) * 2008-11-04 2010-06-24 Rabinovich Joshua E process for energy beam solid-state metallurgical bonding of wires having two or more flat surfaces

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4895735A (en) 1988-03-01 1990-01-23 Texas Instruments Incorporated Radiation induced pattern deposition
US5173441A (en) * 1991-02-08 1992-12-22 Micron Technology, Inc. Laser ablation deposition process for semiconductor manufacture
US5492861A (en) * 1992-09-03 1996-02-20 Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V. Process for applying structured layers using laser transfer
US6709720B2 (en) 1997-03-21 2004-03-23 Kabushiki Kaisha Yaskawa Denki Marking method and marking material
US6419998B1 (en) 2000-06-19 2002-07-16 Mcgrath Thomas Method for deposition of metal catalysts on inert supports
US20100000466A1 (en) * 2006-04-17 2010-01-07 Imra America, Inc. P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
US20100155374A1 (en) * 2008-11-04 2010-06-24 Rabinovich Joshua E process for energy beam solid-state metallurgical bonding of wires having two or more flat surfaces
US8334475B2 (en) 2008-11-04 2012-12-18 Rabinovich Joshua E Process for energy beam solid-state metallurgical bonding of wires having two or more flat surfaces

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