JPS57173937A - Treatment for solid by laser - Google Patents

Treatment for solid by laser

Info

Publication number
JPS57173937A
JPS57173937A JP5895481A JP5895481A JPS57173937A JP S57173937 A JPS57173937 A JP S57173937A JP 5895481 A JP5895481 A JP 5895481A JP 5895481 A JP5895481 A JP 5895481A JP S57173937 A JPS57173937 A JP S57173937A
Authority
JP
Japan
Prior art keywords
gas
molten
solid
region
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5895481A
Other languages
Japanese (ja)
Other versions
JPH0335826B2 (en
Inventor
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5895481A priority Critical patent/JPS57173937A/en
Publication of JPS57173937A publication Critical patent/JPS57173937A/en
Publication of JPH0335826B2 publication Critical patent/JPH0335826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain an impurity mixed layer which is uniform but has sharp impurity concentration at the interface without maintaining the whole solid at high temperature by putting the solid in atmosphere of the specified gas and applying laser beam to the surface of the solid. CONSTITUTION:An Si substrate 2 is placed in atmospheric gas 1 and a laser source 3 is provided above the substrate 2. The laser beam 4 radiated from the source 3 is applied to the surface 5 on the substrate 2 and heats the region 6 directly under the surface 5 and this region 6 is melted. The intensity of the laser beam 4 is so controlled as to prevent molten Si of the region 6 from scattering. As the molten Si of the region 6 has contact with the gas 1 at the surface, if, for instance, arsine gas or phosphine gas is used as the gas 1, these gases are decomposed at the contact surface with the molten Si and solved into the molten Si. The mixed As or P becomes doner impurity in the Si crystal and the molten Si becomes solid and is restored to single crystal formation by shutting off the laser beam 4.
JP5895481A 1981-04-17 1981-04-17 Treatment for solid by laser Granted JPS57173937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5895481A JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5895481A JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Publications (2)

Publication Number Publication Date
JPS57173937A true JPS57173937A (en) 1982-10-26
JPH0335826B2 JPH0335826B2 (en) 1991-05-29

Family

ID=13099225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5895481A Granted JPS57173937A (en) 1981-04-17 1981-04-17 Treatment for solid by laser

Country Status (1)

Country Link
JP (1) JPS57173937A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823255A (en) * 1981-08-01 1983-02-10 Nippon Denso Co Ltd Control method of idling speed in internal combustion engine
JPS63187620A (en) * 1987-01-30 1988-08-03 Sony Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131866A (en) * 1978-04-05 1979-10-13 Nippon Telegr & Teleph Corp <Ntt> Heat treatment device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823255A (en) * 1981-08-01 1983-02-10 Nippon Denso Co Ltd Control method of idling speed in internal combustion engine
JPH0248729B2 (en) * 1981-08-01 1990-10-26 Nippon Denso Kk
JPS63187620A (en) * 1987-01-30 1988-08-03 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0335826B2 (en) 1991-05-29

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