JPS57202740A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57202740A
JPS57202740A JP56087802A JP8780281A JPS57202740A JP S57202740 A JPS57202740 A JP S57202740A JP 56087802 A JP56087802 A JP 56087802A JP 8780281 A JP8780281 A JP 8780281A JP S57202740 A JPS57202740 A JP S57202740A
Authority
JP
Japan
Prior art keywords
substrate
gas
selectively
reaction
sih4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56087802A
Other languages
Japanese (ja)
Inventor
Hideaki Arima
Masahiro Yoneda
Hayaaki Fukumoto
Katsuhiro Hirata
Tadashi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56087802A priority Critical patent/JPS57202740A/en
Publication of JPS57202740A publication Critical patent/JPS57202740A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using synchrotron radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To provide an insulation, semiconductor or metal film at an irradiated part, by placing a substrate in gas or plasma atmosphere, and selectively irradiating an X-ray beam on the substrate. CONSTITUTION:SiH4 and NH3 are supplied 7 while a reaction chamber is kept in proper pressure. A substrate 3 of arbitrary material is heated 4 and is kept at a degree of no reaction with the gas; for instance, 750 deg.C. An X-ray of hundreds of W/mm.<2> is irradiated to a part 3a on the substrate. Gas resolution and radicalization are promoted near the part 3a, and Si3N4 is formed selectively. Electrodes 9, 10 may be provided to make plasma at high-frequency power. Combination of a laser beam at the part 3a promotes the reaction more. Heating at 450 deg.C in SiH4 forms an Si film selectively. A metal film can be formed selectively with a use of gas atmosphere including metal elements.
JP56087802A 1981-06-05 1981-06-05 Manufacture of semiconductor device Pending JPS57202740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56087802A JPS57202740A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56087802A JPS57202740A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57202740A true JPS57202740A (en) 1982-12-11

Family

ID=13925107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56087802A Pending JPS57202740A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202740A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127833A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Thin film manufacturing device according to excited vapor phase deposition
JPS61134020A (en) * 1984-12-05 1986-06-21 Nec Corp Formation of pattern
US5010036A (en) * 1990-04-20 1991-04-23 Eaton Corporation Low temperature semiconductor bonding process with chemical vapor reaction

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127833A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Thin film manufacturing device according to excited vapor phase deposition
JPH0419702B2 (en) * 1983-01-12 1992-03-31 Kogyo Gijutsuin
JPS61134020A (en) * 1984-12-05 1986-06-21 Nec Corp Formation of pattern
US5010036A (en) * 1990-04-20 1991-04-23 Eaton Corporation Low temperature semiconductor bonding process with chemical vapor reaction

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