JPS56158453A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS56158453A
JPS56158453A JP6430880A JP6430880A JPS56158453A JP S56158453 A JPS56158453 A JP S56158453A JP 6430880 A JP6430880 A JP 6430880A JP 6430880 A JP6430880 A JP 6430880A JP S56158453 A JPS56158453 A JP S56158453A
Authority
JP
Japan
Prior art keywords
film
molybdenum
ground
laser beam
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6430880A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Natsuo Tsubouchi
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6430880A priority Critical patent/JPS56158453A/en
Publication of JPS56158453A publication Critical patent/JPS56158453A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain the minute pattern directly by a method wherein a part of a film of molybdenum or molybedenum silicide is selectively converted into molybdenum oxide, and the thermic subliming quality thereof is utilized. CONSTITUTION:An SiO2 ground film 2 is provided on a ground substrate 1, Mo3 is evaporated thereon and is held in an oxidizing gas atmosphere containing O2 at about 500 deg.C. When a laser beam 6 having the prescribed diameter and energy is irradiated on the surface of Mo3 for the prescribed time, a part thereof is heated and sublimed and is removed from the surface of the ground film 2. When the laser beam is controlled by a computor to select the irradiating position automatically and is made to be transferred irradiating the position for the prescribed time, the optional shaped minute pattern can be drawn directly on the Mo film face. The same result can be obtained with the molybdenum silicide film.
JP6430880A 1980-05-12 1980-05-12 Formation of pattern Pending JPS56158453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6430880A JPS56158453A (en) 1980-05-12 1980-05-12 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6430880A JPS56158453A (en) 1980-05-12 1980-05-12 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS56158453A true JPS56158453A (en) 1981-12-07

Family

ID=13254475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6430880A Pending JPS56158453A (en) 1980-05-12 1980-05-12 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS56158453A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
WO2006078382A2 (en) * 2004-12-17 2006-07-27 Intel Corporation Passivating metal etch structures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPH0469933B2 (en) * 1985-08-30 1992-11-09 Mitsubishi Electric Corp
WO2006078382A2 (en) * 2004-12-17 2006-07-27 Intel Corporation Passivating metal etch structures
WO2006078382A3 (en) * 2004-12-17 2006-11-02 Intel Corp Passivating metal etch structures

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