JPS56158453A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS56158453A JPS56158453A JP6430880A JP6430880A JPS56158453A JP S56158453 A JPS56158453 A JP S56158453A JP 6430880 A JP6430880 A JP 6430880A JP 6430880 A JP6430880 A JP 6430880A JP S56158453 A JPS56158453 A JP S56158453A
- Authority
- JP
- Japan
- Prior art keywords
- film
- molybdenum
- ground
- laser beam
- irradiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain the minute pattern directly by a method wherein a part of a film of molybdenum or molybedenum silicide is selectively converted into molybdenum oxide, and the thermic subliming quality thereof is utilized. CONSTITUTION:An SiO2 ground film 2 is provided on a ground substrate 1, Mo3 is evaporated thereon and is held in an oxidizing gas atmosphere containing O2 at about 500 deg.C. When a laser beam 6 having the prescribed diameter and energy is irradiated on the surface of Mo3 for the prescribed time, a part thereof is heated and sublimed and is removed from the surface of the ground film 2. When the laser beam is controlled by a computor to select the irradiating position automatically and is made to be transferred irradiating the position for the prescribed time, the optional shaped minute pattern can be drawn directly on the Mo film face. The same result can be obtained with the molybdenum silicide film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430880A JPS56158453A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6430880A JPS56158453A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158453A true JPS56158453A (en) | 1981-12-07 |
Family
ID=13254475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6430880A Pending JPS56158453A (en) | 1980-05-12 | 1980-05-12 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158453A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252550A (en) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | Photomask material |
WO2006078382A2 (en) * | 2004-12-17 | 2006-07-27 | Intel Corporation | Passivating metal etch structures |
-
1980
- 1980-05-12 JP JP6430880A patent/JPS56158453A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6252550A (en) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | Photomask material |
JPH0469933B2 (en) * | 1985-08-30 | 1992-11-09 | Mitsubishi Electric Corp | |
WO2006078382A2 (en) * | 2004-12-17 | 2006-07-27 | Intel Corporation | Passivating metal etch structures |
WO2006078382A3 (en) * | 2004-12-17 | 2006-11-02 | Intel Corp | Passivating metal etch structures |
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