JPS5533033A - Manufacture of oxide film of semiconductor - Google Patents

Manufacture of oxide film of semiconductor

Info

Publication number
JPS5533033A
JPS5533033A JP10505078A JP10505078A JPS5533033A JP S5533033 A JPS5533033 A JP S5533033A JP 10505078 A JP10505078 A JP 10505078A JP 10505078 A JP10505078 A JP 10505078A JP S5533033 A JPS5533033 A JP S5533033A
Authority
JP
Japan
Prior art keywords
irradiated
atmosphere
semiconductor
laser light
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10505078A
Other languages
Japanese (ja)
Other versions
JPS6145855B2 (en
Inventor
Toshihisa Torikai
Koichi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10505078A priority Critical patent/JPS5533033A/en
Publication of JPS5533033A publication Critical patent/JPS5533033A/en
Publication of JPS6145855B2 publication Critical patent/JPS6145855B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent defects and dislocation due to thermal strain, by irradiating a semiconductor under an atmosphere of oxgygen or oxygen-containing gas with light of such energy density as to instantaneously melt the surface of the semiconductor, so that an oxide film is produced on the irradiated part only. CONSTITUTION:A ruby laser light source 1 for a wavelength of 0.694mum is installed. The oxygen gas in a treatment chamber 9 is maintained at 20 atmosphere. The energy density of the output light of the ruby laser light source is set at 2.0 joule/cm<-2> per pulse. The beam of the light is converged to a diameter of 50mum by lenses 3-5 and irradiated through a quartz window 6 upon the surface of a silicon piece 7 set in the treatment chamber 9 so that the surface of the irradiated part is instantaneously molten. As a result, an SiO2 film of about 600Angstrom in thickness is produced. If the time of the laser light irradiation is kept constant and the pressure of the atmosphere of oxygen is altered, the thickness of the SiO2 film is changed. Because the temperature of the silicon piece is raised at the irradiated only, the defects and dislocation are very little.
JP10505078A 1978-08-28 1978-08-28 Manufacture of oxide film of semiconductor Granted JPS5533033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10505078A JPS5533033A (en) 1978-08-28 1978-08-28 Manufacture of oxide film of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10505078A JPS5533033A (en) 1978-08-28 1978-08-28 Manufacture of oxide film of semiconductor

Publications (2)

Publication Number Publication Date
JPS5533033A true JPS5533033A (en) 1980-03-08
JPS6145855B2 JPS6145855B2 (en) 1986-10-09

Family

ID=14397155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10505078A Granted JPS5533033A (en) 1978-08-28 1978-08-28 Manufacture of oxide film of semiconductor

Country Status (1)

Country Link
JP (1) JPS5533033A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160133A (en) * 1981-03-27 1982-10-02 Makoto Matsuura Oxidation of semiconductor compound

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272172A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Formation of insulator film on semiconductor crystal
JPS52128065A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Pattern formation of semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272172A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Formation of insulator film on semiconductor crystal
JPS52128065A (en) * 1976-04-20 1977-10-27 Matsushita Electric Ind Co Ltd Pattern formation of semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160133A (en) * 1981-03-27 1982-10-02 Makoto Matsuura Oxidation of semiconductor compound

Also Published As

Publication number Publication date
JPS6145855B2 (en) 1986-10-09

Similar Documents

Publication Publication Date Title
Manenkov Laser-induced damage in transparent solids
JPS56145530A (en) Optical information recording and erasing method
JPS5533033A (en) Manufacture of oxide film of semiconductor
JPS57155726A (en) Manufacture of semiconductor device
Siregar et al. Dynamics of CO2 laser heating in the processing of silicon
JPS56126914A (en) Manufacture of semiconductor device
JPS57198259A (en) Surface treatment of titanium or titanium alloy
JPS5635412A (en) Manufacture of single crystal semiconductor film
Yoshida et al. Wavelength-dependence of laser-induced damage in fused silica and fused quartz
GB2056769A (en) Dual wavelength laser annealing of material
JPS55132045A (en) Nitride film forming method
JPS57130435A (en) Annealing method of matter by light beam
JPS5948977A (en) Manufacture of laser diode
JPS57102008A (en) Control of warp of semiconductor wafer
JPS5694631A (en) Forming method for minute pattern
JPS5637633A (en) Formation of oxide film
JPS56124236A (en) Method for selective thermal oxidized film formation on semiconductor substrate
Boyd et al. Confirmation of the wavelength dependence of silicon oxidation induced by visible radiation
JPS5627395A (en) Recording medium and preparation thereof
JPS57160119A (en) Manufacture of amorphous silicon film by reactive laser sputtering
JPS56158453A (en) Formation of pattern
Jiang et al. Laser-controlled precipitation of gold nanoparticles in silicate glasses
JPS6441210A (en) Manufacture of sic thin-film
JPS57202740A (en) Manufacture of semiconductor device
JPS6428913A (en) Laser anneal device