JPS57160133A - Oxidation of semiconductor compound - Google Patents

Oxidation of semiconductor compound

Info

Publication number
JPS57160133A
JPS57160133A JP56044165A JP4416581A JPS57160133A JP S57160133 A JPS57160133 A JP S57160133A JP 56044165 A JP56044165 A JP 56044165A JP 4416581 A JP4416581 A JP 4416581A JP S57160133 A JPS57160133 A JP S57160133A
Authority
JP
Japan
Prior art keywords
substrate surface
semiconductor compound
oxide film
vessel
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56044165A
Other languages
Japanese (ja)
Inventor
Makoto Matsuura
Tetsuo Nakamura
Makoto Ishida
Shiyou Nishinaga
Yukio Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56044165A priority Critical patent/JPS57160133A/en
Publication of JPS57160133A publication Critical patent/JPS57160133A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a good oxide film devoid of trap or denatured layer on the surface of a semiconductor compound, by applhying a laser beam on the substrate surface in an oxidizing atomsphere to form the oxide film on and adjacent the substrate surface. CONSTITUTION:A semiconductor compound substrate such as a GaAs wafer having one free surface is disposed in a vessel which is beforehand evacuated to a vacuum of about 5X10<-4>Torr. Then, oxygen gas is introduced into the vessel to form an oxidizing atmosphere of a pressure of about 2 atm. Subsequently, pulses of ruby laser beam are applied to the substrate surface to form an oxide film on and adjacent the substrate surface.
JP56044165A 1981-03-27 1981-03-27 Oxidation of semiconductor compound Pending JPS57160133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56044165A JPS57160133A (en) 1981-03-27 1981-03-27 Oxidation of semiconductor compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56044165A JPS57160133A (en) 1981-03-27 1981-03-27 Oxidation of semiconductor compound

Publications (1)

Publication Number Publication Date
JPS57160133A true JPS57160133A (en) 1982-10-02

Family

ID=12683973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56044165A Pending JPS57160133A (en) 1981-03-27 1981-03-27 Oxidation of semiconductor compound

Country Status (1)

Country Link
JP (1) JPS57160133A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device
JPS5533033A (en) * 1978-08-28 1980-03-08 Nec Corp Manufacture of oxide film of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5421172A (en) * 1977-07-18 1979-02-17 Nec Corp Manufacture for semiconductor device
JPS5533033A (en) * 1978-08-28 1980-03-08 Nec Corp Manufacture of oxide film of semiconductor

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