JPS5717167A - Mesa type semiconductor device - Google Patents

Mesa type semiconductor device

Info

Publication number
JPS5717167A
JPS5717167A JP9139380A JP9139380A JPS5717167A JP S5717167 A JPS5717167 A JP S5717167A JP 9139380 A JP9139380 A JP 9139380A JP 9139380 A JP9139380 A JP 9139380A JP S5717167 A JPS5717167 A JP S5717167A
Authority
JP
Japan
Prior art keywords
oxide film
mesa
type gaas
electrode
contact layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9139380A
Other languages
Japanese (ja)
Inventor
Kazuo Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9139380A priority Critical patent/JPS5717167A/en
Publication of JPS5717167A publication Critical patent/JPS5717167A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a gun diode, which has an excellent protective function against impurities from outside atmosphere, by forming an insulating membrane on surface of a substrate. CONSTITUTION:On a Te-doped N<++> type GaAs substrate 21, such an impurity as Si is added to allow an N type GaAs to achieve gaseous phase growth so as to form a buffer layer (N<+>) 22, an active layer (N) 23 and a contact layer (N<+>) 24 in turn. And then, mesa etching is executed by photoresist process. And then, an oxide film 28 is laminated on the mesa section side by CVD process, and an oxide film is removed from the top section of the mesa. Further, an ohmic electrode 25 on a contact layer 24, a lead wire take-out electrode 27 on the oxide film 28 and a bottom surface electrode 26 are also formed.
JP9139380A 1980-07-04 1980-07-04 Mesa type semiconductor device Pending JPS5717167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9139380A JPS5717167A (en) 1980-07-04 1980-07-04 Mesa type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9139380A JPS5717167A (en) 1980-07-04 1980-07-04 Mesa type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5717167A true JPS5717167A (en) 1982-01-28

Family

ID=14025131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9139380A Pending JPS5717167A (en) 1980-07-04 1980-07-04 Mesa type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5717167A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US6803298B2 (en) 2000-02-17 2004-10-12 Fabtech, Inc. Method of manufacturing a device with epitaxial base

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
US6803298B2 (en) 2000-02-17 2004-10-12 Fabtech, Inc. Method of manufacturing a device with epitaxial base

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