JPS56104474A - Silicon semiconductor device - Google Patents

Silicon semiconductor device

Info

Publication number
JPS56104474A
JPS56104474A JP705280A JP705280A JPS56104474A JP S56104474 A JPS56104474 A JP S56104474A JP 705280 A JP705280 A JP 705280A JP 705280 A JP705280 A JP 705280A JP S56104474 A JPS56104474 A JP S56104474A
Authority
JP
Japan
Prior art keywords
gate
source
groove
metal
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP705280A
Other languages
Japanese (ja)
Other versions
JPH0253942B2 (en
Inventor
Junichi Nishizawa
Yukihisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP705280A priority Critical patent/JPS56104474A/en
Publication of JPS56104474A publication Critical patent/JPS56104474A/en
Publication of JPH0253942B2 publication Critical patent/JPH0253942B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate

Abstract

PURPOSE:To facilitate the manufacture of the silicon semiconductor device and to improve the performance thereof by forming a groove having a rectangular cross section using a directional etching and forming current control means in the groove. CONSTITUTION:An n<-> type layer 19 and an n<+> type layer 20 are formed on a silicon substrate having a main surface generally parallel to the (111) plane, and a plasma etching is conducted in a direction that the gate line becomes (110) direction. p<+> and n<+> are diffused in the gate and the source respectively to form a gate region 21 and a source diffused region 22. Since the groove section is formed in rectangle when the electrode aluminum 23 is evaporated on the entire surface, a gate metal and a source metal are isolated. Accordingly, it can omit the step of etching to isolate the gate metal and the source metal so as to improve the yield.
JP705280A 1980-01-23 1980-01-23 Silicon semiconductor device Granted JPS56104474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP705280A JPS56104474A (en) 1980-01-23 1980-01-23 Silicon semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP705280A JPS56104474A (en) 1980-01-23 1980-01-23 Silicon semiconductor device

Publications (2)

Publication Number Publication Date
JPS56104474A true JPS56104474A (en) 1981-08-20
JPH0253942B2 JPH0253942B2 (en) 1990-11-20

Family

ID=11655283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP705280A Granted JPS56104474A (en) 1980-01-23 1980-01-23 Silicon semiconductor device

Country Status (1)

Country Link
JP (1) JPS56104474A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165419A2 (en) * 1984-05-29 1985-12-27 Kabushiki Kaisha Meidensha Buried-gate structure-type semiconductor switching device
JPS6194328A (en) * 1984-10-16 1986-05-13 Oki Electric Ind Co Ltd Etching method
JPS6393144A (en) * 1986-05-19 1988-04-23 テキサス　インスツルメンツ　インコ−ポレイテツド Transistor construction of epitaxial system layers and manufacture of the same
JPH0482275A (en) * 1990-01-31 1992-03-16 Res Dev Corp Of Japan Semiconductor device and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013042117A (en) * 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5343483A (en) * 1976-10-01 1978-04-19 Handotai Kenkyu Shinkokai Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5343483A (en) * 1976-10-01 1978-04-19 Handotai Kenkyu Shinkokai Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0165419A2 (en) * 1984-05-29 1985-12-27 Kabushiki Kaisha Meidensha Buried-gate structure-type semiconductor switching device
JPS6194328A (en) * 1984-10-16 1986-05-13 Oki Electric Ind Co Ltd Etching method
JPS6393144A (en) * 1986-05-19 1988-04-23 テキサス　インスツルメンツ　インコ−ポレイテツド Transistor construction of epitaxial system layers and manufacture of the same
JPH0482275A (en) * 1990-01-31 1992-03-16 Res Dev Corp Of Japan Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0253942B2 (en) 1990-11-20

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