JPS57187947A - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JPS57187947A
JPS57187947A JP7168281A JP7168281A JPS57187947A JP S57187947 A JPS57187947 A JP S57187947A JP 7168281 A JP7168281 A JP 7168281A JP 7168281 A JP7168281 A JP 7168281A JP S57187947 A JPS57187947 A JP S57187947A
Authority
JP
Japan
Prior art keywords
type semiconductor
insulation film
semiconductor region
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7168281A
Other languages
Japanese (ja)
Other versions
JPS6258541B2 (en
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7168281A priority Critical patent/JPS57187947A/en
Publication of JPS57187947A publication Critical patent/JPS57187947A/en
Publication of JPS6258541B2 publication Critical patent/JPS6258541B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

PURPOSE:To obtain greater attraction with less voltage applied, by covering both surfaces of P and N type semiconductor regions with insulation film, and providing electrodes in connecting with both regions. CONSTITUTION:A P type semiconductor region 10 and an N<+> type semiconductor region 7 are arranged alternately as seen on the plane. A new insulation film 11 is formed, after a patterning insulation film is removed. The surrounding of insulation film 11 is removed in ring-shape. Al is evaporated to the removed part with metal mask. an electrode 12 is formed at the N<+> type semiconductor region 7. Next, an electrode 13 is formed at the P type semiconductor region 10 by metallizing Al on the back of P type silicon substrate 4. Then, voltage is applied to the electrodes 12, 13 to inverse the P-N junction. The electrostatic force is produced between both electrodes. It attracts and chucks the wafer mounted on.
JP7168281A 1981-05-13 1981-05-13 Electrostatic chuck Granted JPS57187947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7168281A JPS57187947A (en) 1981-05-13 1981-05-13 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7168281A JPS57187947A (en) 1981-05-13 1981-05-13 Electrostatic chuck

Publications (2)

Publication Number Publication Date
JPS57187947A true JPS57187947A (en) 1982-11-18
JPS6258541B2 JPS6258541B2 (en) 1987-12-07

Family

ID=13467573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7168281A Granted JPS57187947A (en) 1981-05-13 1981-05-13 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPS57187947A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950537A (en) * 1982-09-17 1984-03-23 Hitachi Ltd Wafer chuck
JPS60130006U (en) * 1984-02-08 1985-08-31 株式会社 平安鉄工所 coordinate reader
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
WO2008051369A2 (en) * 2006-10-25 2008-05-02 Axcelis Technologies, Inc. Low-cost electrostatic clamp with fast declamp time and the manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6431628B1 (en) * 2018-02-22 2018-11-28 株式会社タカラトミー Top toy

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950537A (en) * 1982-09-17 1984-03-23 Hitachi Ltd Wafer chuck
JPS60130006U (en) * 1984-02-08 1985-08-31 株式会社 平安鉄工所 coordinate reader
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
WO2008051369A2 (en) * 2006-10-25 2008-05-02 Axcelis Technologies, Inc. Low-cost electrostatic clamp with fast declamp time and the manufacture
WO2008051369A3 (en) * 2006-10-25 2008-07-31 Axcelis Tech Inc Low-cost electrostatic clamp with fast declamp time and the manufacture

Also Published As

Publication number Publication date
JPS6258541B2 (en) 1987-12-07

Similar Documents

Publication Publication Date Title
JPS57187947A (en) Electrostatic chuck
JPS53142196A (en) Bipolar type semiconductor device
JPS55102267A (en) Semiconductor control element
JPS55102268A (en) Protecting circuit for semiconductor device
JPS56103463A (en) Semiconductor device of high withstand voltage planar type
JPS56104474A (en) Silicon semiconductor device
JPS5539636A (en) Composite semiconductor
JPS55146967A (en) Semiconductor ic device
JPS5624971A (en) Manufacture of semiconductor device
JPS5670675A (en) Manufacture of photoelectric converter
JPS5712579A (en) Buried type semiconductor laser
JPS5633852A (en) Manufacture of semiconductor device
JPS57202773A (en) Silicon integrated circuit device
JPS55130141A (en) Fabricating method of semiconductor device
JPS5636160A (en) Schottky barrier type semiconductor device
JPS57184250A (en) Field-effect type semiconductor circuit element
JPS5525910A (en) Multiple cold emission cathode
JPS56107585A (en) Semiconductor diode device
JPS57128982A (en) Semiconductor device
JPS6459824A (en) Pressure-contact type semiconductor device
JPS57122533A (en) Semiconductor device
JPS57206060A (en) Manufacturing method for semiconductor device
JPS5524429A (en) Punch-through type constant-voltage diode and its manufacturing method
JPS55138858A (en) Semiconductor device and method of fabricating the same
JPS57139971A (en) Semiconductor device with high withstand voltage