JPS56165338A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS56165338A JPS56165338A JP6926980A JP6926980A JPS56165338A JP S56165338 A JPS56165338 A JP S56165338A JP 6926980 A JP6926980 A JP 6926980A JP 6926980 A JP6926980 A JP 6926980A JP S56165338 A JPS56165338 A JP S56165338A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- section
- region
- coated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To introduce inpurities without damaging a metallic layer and realize a device having the high degree of integration by introducing impurities only to an opening region except a metallic section having the high melting point after opening.
CONSTITUTION: A field oxide film 102 is formed to an inactive region on a P type silicon substrate 101, and a gate oxide film 103 is made up to an active region. Molybdenum is coated according to a sputtering method, a gate electrode 104 is built up according to a photoetching method and a source-drain diffusion layer 105 is formed according to arsenic ion injection. A main surface is coated with a PSG layer film 106, an opening 107 only to the source-drain diffusion layer section is made up and an opening section diffusion region 108 is built up according to the thermal diffusion of phosphorus. An opening 109 of the gate electrode section is formed again according to the photoetching method, aluminum is coated according to electron beam evaporation and an aluminum wiring electrode 110 is made up.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6926980A JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6926980A JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56165338A true JPS56165338A (en) | 1981-12-18 |
JPS639658B2 JPS639658B2 (en) | 1988-03-01 |
Family
ID=13397787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6926980A Granted JPS56165338A (en) | 1980-05-23 | 1980-05-23 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56165338A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966170A (en) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | Manufacture of semiconductor device |
JPS6042849A (en) * | 1983-08-18 | 1985-03-07 | Sharp Corp | Manufacture of semiconductor device |
JPH01286432A (en) * | 1988-05-13 | 1989-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Detecting method for defects of insulating film |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494987A (en) * | 1972-04-26 | 1974-01-17 | ||
JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
JPS51112266A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Ltd | Semiconductor device production method |
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
JPS5210672A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor device |
JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
-
1980
- 1980-05-23 JP JP6926980A patent/JPS56165338A/en active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494987A (en) * | 1972-04-26 | 1974-01-17 | ||
US3986903A (en) * | 1974-03-13 | 1976-10-19 | Intel Corporation | Mosfet transistor and method of fabrication |
JPS5169985A (en) * | 1974-12-16 | 1976-06-17 | Hitachi Ltd | Handotaisochino seizohoho |
JPS51112266A (en) * | 1975-03-28 | 1976-10-04 | Hitachi Ltd | Semiconductor device production method |
JPS5210672A (en) * | 1975-07-15 | 1977-01-27 | Matsushita Electric Ind Co Ltd | Semi-conductor device |
JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5966170A (en) * | 1982-10-08 | 1984-04-14 | Toshiba Corp | Manufacture of semiconductor device |
JPS6042849A (en) * | 1983-08-18 | 1985-03-07 | Sharp Corp | Manufacture of semiconductor device |
JPH01286432A (en) * | 1988-05-13 | 1989-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Detecting method for defects of insulating film |
Also Published As
Publication number | Publication date |
---|---|
JPS639658B2 (en) | 1988-03-01 |
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