JPS56165338A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56165338A
JPS56165338A JP6926980A JP6926980A JPS56165338A JP S56165338 A JPS56165338 A JP S56165338A JP 6926980 A JP6926980 A JP 6926980A JP 6926980 A JP6926980 A JP 6926980A JP S56165338 A JPS56165338 A JP S56165338A
Authority
JP
Japan
Prior art keywords
opening
section
region
coated
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6926980A
Other languages
Japanese (ja)
Other versions
JPS639658B2 (en
Inventor
Osamu Kudo
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6926980A priority Critical patent/JPS56165338A/en
Publication of JPS56165338A publication Critical patent/JPS56165338A/en
Publication of JPS639658B2 publication Critical patent/JPS639658B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To introduce inpurities without damaging a metallic layer and realize a device having the high degree of integration by introducing impurities only to an opening region except a metallic section having the high melting point after opening.
CONSTITUTION: A field oxide film 102 is formed to an inactive region on a P type silicon substrate 101, and a gate oxide film 103 is made up to an active region. Molybdenum is coated according to a sputtering method, a gate electrode 104 is built up according to a photoetching method and a source-drain diffusion layer 105 is formed according to arsenic ion injection. A main surface is coated with a PSG layer film 106, an opening 107 only to the source-drain diffusion layer section is made up and an opening section diffusion region 108 is built up according to the thermal diffusion of phosphorus. An opening 109 of the gate electrode section is formed again according to the photoetching method, aluminum is coated according to electron beam evaporation and an aluminum wiring electrode 110 is made up.
COPYRIGHT: (C)1981,JPO&Japio
JP6926980A 1980-05-23 1980-05-23 Semiconductor device and manufacture thereof Granted JPS56165338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6926980A JPS56165338A (en) 1980-05-23 1980-05-23 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6926980A JPS56165338A (en) 1980-05-23 1980-05-23 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56165338A true JPS56165338A (en) 1981-12-18
JPS639658B2 JPS639658B2 (en) 1988-03-01

Family

ID=13397787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6926980A Granted JPS56165338A (en) 1980-05-23 1980-05-23 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56165338A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966170A (en) * 1982-10-08 1984-04-14 Toshiba Corp Manufacture of semiconductor device
JPS6042849A (en) * 1983-08-18 1985-03-07 Sharp Corp Manufacture of semiconductor device
JPH01286432A (en) * 1988-05-13 1989-11-17 Nippon Telegr & Teleph Corp <Ntt> Detecting method for defects of insulating film

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494987A (en) * 1972-04-26 1974-01-17
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS51112266A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device production method
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
JPS5210672A (en) * 1975-07-15 1977-01-27 Matsushita Electric Ind Co Ltd Semi-conductor device
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494987A (en) * 1972-04-26 1974-01-17
US3986903A (en) * 1974-03-13 1976-10-19 Intel Corporation Mosfet transistor and method of fabrication
JPS5169985A (en) * 1974-12-16 1976-06-17 Hitachi Ltd Handotaisochino seizohoho
JPS51112266A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor device production method
JPS5210672A (en) * 1975-07-15 1977-01-27 Matsushita Electric Ind Co Ltd Semi-conductor device
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966170A (en) * 1982-10-08 1984-04-14 Toshiba Corp Manufacture of semiconductor device
JPS6042849A (en) * 1983-08-18 1985-03-07 Sharp Corp Manufacture of semiconductor device
JPH01286432A (en) * 1988-05-13 1989-11-17 Nippon Telegr & Teleph Corp <Ntt> Detecting method for defects of insulating film

Also Published As

Publication number Publication date
JPS639658B2 (en) 1988-03-01

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