JPS5617071A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5617071A
JPS5617071A JP9229079A JP9229079A JPS5617071A JP S5617071 A JPS5617071 A JP S5617071A JP 9229079 A JP9229079 A JP 9229079A JP 9229079 A JP9229079 A JP 9229079A JP S5617071 A JPS5617071 A JP S5617071A
Authority
JP
Japan
Prior art keywords
forming
type layer
plane
layer
trapezoil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9229079A
Other languages
Japanese (ja)
Inventor
Yoshihide Sugiura
Motoo Nakano
Ryusuke Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9229079A priority Critical patent/JPS5617071A/en
Publication of JPS5617071A publication Critical patent/JPS5617071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the parasitic capacity of the semiconductor device upon reduction of the size of the device by forming stereoscopically an element region when forming an SOS-type MOS transistor. CONSTITUTION:An N<+>-type layer, a P-type layer, a P<->-type layer and an N<+>-type layer are laminated to form them in a plane (100) while additionally adjusting the impurity in Si on a sapphire substrate 2 in epitaxial grown. Then, in order to obtain a transistor forming surface, unnecessary portion is etched with an etching solution of KOH group having much larger etchig rate for the etching rate for the plate (111) than the etching rate for the plane (100) of the surface 18a of the epitaxial layer to form a trapezoil having an oblique surface (111) at an angle of 57 deg. with respect to the plane (100). Then, a gate oxide film 4 is formed around the N<+>PN<+>- layer forming the trapezoil, a polycrystalline Si is coated thereon, is patterned, as a gate electrode G, a PSG film 24 is then coated thereon, openings are perforated thereat, and source and drain electrode wires 20, 22 are mounted therethrough.
JP9229079A 1979-07-20 1979-07-20 Semiconductor device Pending JPS5617071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9229079A JPS5617071A (en) 1979-07-20 1979-07-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9229079A JPS5617071A (en) 1979-07-20 1979-07-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617071A true JPS5617071A (en) 1981-02-18

Family

ID=14050271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9229079A Pending JPS5617071A (en) 1979-07-20 1979-07-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617071A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871664A (en) * 1981-10-23 1983-04-28 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5871663A (en) * 1981-10-23 1983-04-28 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS61144875A (en) * 1984-12-18 1986-07-02 Mitsubishi Electric Corp Mos integrated circuit
JPS6231176A (en) * 1985-08-02 1987-02-10 Sharp Corp Laminated semiconductor device
JPH0650499U (en) * 1992-10-23 1994-07-12 三州産業株式会社 Leaf tobacco dryer
JPH07297406A (en) * 1994-04-21 1995-11-10 Tdk Corp Vertical thin film semiconductor device
WO2002017375A1 (en) * 2000-08-18 2002-02-28 Infineon Technologies Ag Vertical field-effect transistor and method for the production thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871664A (en) * 1981-10-23 1983-04-28 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS5871663A (en) * 1981-10-23 1983-04-28 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS61144875A (en) * 1984-12-18 1986-07-02 Mitsubishi Electric Corp Mos integrated circuit
JPS6231176A (en) * 1985-08-02 1987-02-10 Sharp Corp Laminated semiconductor device
JPH0650499U (en) * 1992-10-23 1994-07-12 三州産業株式会社 Leaf tobacco dryer
JPH07297406A (en) * 1994-04-21 1995-11-10 Tdk Corp Vertical thin film semiconductor device
WO2002017375A1 (en) * 2000-08-18 2002-02-28 Infineon Technologies Ag Vertical field-effect transistor and method for the production thereof
DE10040458B4 (en) * 2000-08-18 2015-08-27 Infineon Technologies Ag Vertical field effect transistor and method for its production

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