JPS57126167A - Mos type semiconductor device and manufacture thereof - Google Patents
Mos type semiconductor device and manufacture thereofInfo
- Publication number
- JPS57126167A JPS57126167A JP1057581A JP1057581A JPS57126167A JP S57126167 A JPS57126167 A JP S57126167A JP 1057581 A JP1057581 A JP 1057581A JP 1057581 A JP1057581 A JP 1057581A JP S57126167 A JPS57126167 A JP S57126167A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- substrate
- polycrystalline
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To reduce the resistance of regions and to obtain an MOS type element to operate at a high speed by a method wherein a semiconductor layer positioning at the lower part of a gate oxide film is constituted of a polycrystalline semiconductor layer to surround a single crystal semiconductor layer, and ions are implanted therein to provide source and drain regions wherein the deep region and the shallow region are connected. CONSTITUTION:A mask of photo resist film 2 is provided at the center part on the surface of a p-type Si substrate 1, Si ions are implanted therein to convert the exposed surface of the substrate 1 into the amorphous surface, and the film 2 is removed to obtain the single crystal surface region 3 surrounded with the polycrystalline surface region 4. Then a single crystal Si layer 51 is made to be generated on the region 3 and a polycrystalline Si layer 52 is made to be generated on the region 4 respectively by epitaxial growth, and a thick field oxide film 6 to enter into the substrate 1 is formed at the circumferential part of the substrate 1 arranging the surfaces in a line. Then a thin gate oxide film 7 is made to grow between the film 6, a gate pole 8 of polycrystalline Si is provided thereon, and As ions are implanted making the pole thereof as the mask to form n<+> type source and drain regions 9, 10 respectively shallowly in the layer 51, and deeply in the layer 52.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1057581A JPS57126167A (en) | 1981-01-27 | 1981-01-27 | Mos type semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1057581A JPS57126167A (en) | 1981-01-27 | 1981-01-27 | Mos type semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57126167A true JPS57126167A (en) | 1982-08-05 |
Family
ID=11754028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1057581A Pending JPS57126167A (en) | 1981-01-27 | 1981-01-27 | Mos type semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57126167A (en) |
-
1981
- 1981-01-27 JP JP1057581A patent/JPS57126167A/en active Pending
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