JPS5797676A - Manufacture of mos semiconductor device - Google Patents

Manufacture of mos semiconductor device

Info

Publication number
JPS5797676A
JPS5797676A JP17427680A JP17427680A JPS5797676A JP S5797676 A JPS5797676 A JP S5797676A JP 17427680 A JP17427680 A JP 17427680A JP 17427680 A JP17427680 A JP 17427680A JP S5797676 A JPS5797676 A JP S5797676A
Authority
JP
Japan
Prior art keywords
film
electrode
masks
remaining
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17427680A
Other languages
Japanese (ja)
Inventor
Yoshihide Nagakubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17427680A priority Critical patent/JPS5797676A/en
Publication of JPS5797676A publication Critical patent/JPS5797676A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To form source and drain regions in an MOS semiconductor device with good controllability by doping an impurity with a thin film remaining on the side of a gate electrode and the gate electrode as masks. CONSTITUTION:A gate electrode 14 is formed on a P type silicon substrate 11 formed with a thermally oxidized film 13, and an oxidized film 15 is formed around the gate 14. After a polycrystalline silicon layer is then accumulated on the overall substrate, it is anisotropically etched to remain with a polycrystalline silicon film 16' on the peripheral side of the electrode 14. After the film 13 and the film 15 on the electrode 14 are etched and removed with the film 16' as a mask, the remaining film 16' is removed. Thereafter, with the electrode 14 and remaining thermally oxidized film 13' as masks phosphorus is thermally diffused to form n<+> source and drain regions 17, 18. With the electrode 14 and the silicon film 16' as masks phosphorus may be ion-implanted.
JP17427680A 1980-12-10 1980-12-10 Manufacture of mos semiconductor device Pending JPS5797676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17427680A JPS5797676A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17427680A JPS5797676A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797676A true JPS5797676A (en) 1982-06-17

Family

ID=15975822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17427680A Pending JPS5797676A (en) 1980-12-10 1980-12-10 Manufacture of mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797676A (en)

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