JPS5787169A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5787169A JPS5787169A JP16416680A JP16416680A JPS5787169A JP S5787169 A JPS5787169 A JP S5787169A JP 16416680 A JP16416680 A JP 16416680A JP 16416680 A JP16416680 A JP 16416680A JP S5787169 A JPS5787169 A JP S5787169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- buried layer
- buried
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To reduce the redistribution of impurity density on the grown layer of the subject semiconductor device by a method wherein, after a buried layer region has been formed, a reverse conductive type buried layer is provided on the surface of the buried layer region when a bipolar type IC is manufactured, and subsequently, an epitaxial layer is grown on the whole surface including the above buried layer. CONSTITUTION:An N<+> type buried layer 2 is formed by diffusion on a P type Si substrate 1, a P type impurity ion 5 is implanted through the intermediary of a thin oxide film of 0.1mum or thereabout provided on the buried layer 2, and a reverse conductive type buried layer of low impurity density is provided on the layer 2. Then, an N type layer 3 is epitaxially grown on the whole surface, including the layer 2, using the ordinary method. Through these procedures, a redistributed layer 6 of P type impurity is generated on the layer 2, this layer 6 suppresses the redistribution of the N type impurity coming from the layer 2, and the density of the whole impurities on the epitaxial layer 3 can be uniformalized. Accordingly, the bipolar IC with the equivalent characteristics can be obtained by using the substrate formed as above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16416680A JPS5787169A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16416680A JPS5787169A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5787169A true JPS5787169A (en) | 1982-05-31 |
Family
ID=15787975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16416680A Pending JPS5787169A (en) | 1980-11-20 | 1980-11-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5787169A (en) |
-
1980
- 1980-11-20 JP JP16416680A patent/JPS5787169A/en active Pending
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