JPS5449063A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5449063A JPS5449063A JP11631877A JP11631877A JPS5449063A JP S5449063 A JPS5449063 A JP S5449063A JP 11631877 A JP11631877 A JP 11631877A JP 11631877 A JP11631877 A JP 11631877A JP S5449063 A JPS5449063 A JP S5449063A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- type
- film
- oxidized film
- impurity ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a high-preformance MOS-IC at high yield by injecting impurity ions into a semiconductor substrate via an insulating film provided to the surface from its normal-line direction with the substrate surface selected to the (511) surface.
CONSTITUTION: At both the end parts of P-type Si substrate 7 with the (511) surface, P+-type regions are diffusion-formed, thick field oxidized film 6 is grown on it, and source and drain formation regions are removed. Next, thin gate oxidized film 8 is adhered to it, polycrystal Si gate electrode 4 is fitted to the center part, and the surface and flank are covered with an oxidized film. Then, electrode 4 is used as a mask for providing through holes to exposed parts of film 8, and N-type impurity ions are implanted into substrate 7 from the (511) direction of substrate 7 to generate a N-type region. Consequently, a chattering phenomenon is prevented from occurring and its yield improves
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11631877A JPS5449063A (en) | 1977-09-27 | 1977-09-27 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11631877A JPS5449063A (en) | 1977-09-27 | 1977-09-27 | Semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5449063A true JPS5449063A (en) | 1979-04-18 |
Family
ID=14684011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11631877A Pending JPS5449063A (en) | 1977-09-27 | 1977-09-27 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5449063A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220424A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS61178268U (en) * | 1985-04-24 | 1986-11-07 | ||
JP4888387B2 (en) * | 2005-11-18 | 2012-02-29 | 三菱電機株式会社 | Elevator car lighting equipment |
-
1977
- 1977-09-27 JP JP11631877A patent/JPS5449063A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220424A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor device |
JPS61178268U (en) * | 1985-04-24 | 1986-11-07 | ||
JP4888387B2 (en) * | 2005-11-18 | 2012-02-29 | 三菱電機株式会社 | Elevator car lighting equipment |
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