JPS5412565A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5412565A
JPS5412565A JP7660077A JP7660077A JPS5412565A JP S5412565 A JPS5412565 A JP S5412565A JP 7660077 A JP7660077 A JP 7660077A JP 7660077 A JP7660077 A JP 7660077A JP S5412565 A JPS5412565 A JP S5412565A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
layer
substrate
undersired
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7660077A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7660077A priority Critical patent/JPS5412565A/en
Publication of JPS5412565A publication Critical patent/JPS5412565A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To avert undersired ion implantation to channel parts and prevent short channeling by providing a polycrystalline Si layer partially on a semiconductor substrate, converting only the surface layer to a SiO2 layer and implanting impurity ions within the substrate by using this as a mask.
COPYRIGHT: (C)1979,JPO&Japio
JP7660077A 1977-06-29 1977-06-29 Production of semiconductor device Pending JPS5412565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7660077A JPS5412565A (en) 1977-06-29 1977-06-29 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7660077A JPS5412565A (en) 1977-06-29 1977-06-29 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5412565A true JPS5412565A (en) 1979-01-30

Family

ID=13609804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7660077A Pending JPS5412565A (en) 1977-06-29 1977-06-29 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5412565A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868137A (en) * 1987-12-29 1989-09-19 Nec Corporation Method of making insulated-gate field effect transistor
US4927777A (en) * 1989-01-24 1990-05-22 Harris Corporation Method of making a MOS transistor
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
US5464784A (en) * 1992-09-30 1995-11-07 Sgs-Thomson Microelectronics S.R.L. Method of fabricating integrated devices
US5568418A (en) * 1992-09-30 1996-10-22 Sgs-Thomson Microelectronics S.R.L. Non-volatile memory in an integrated circuit
US5798279A (en) * 1992-09-30 1998-08-25 Sgs-Thomson Microelectronics S.R.L. Method of fabricating non-volatile memories with overlapping layers
JP2006335458A (en) * 2005-06-06 2006-12-14 Sanko Gosei Ltd Opening and closing lid with nozzle cap for packaging container

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868137A (en) * 1987-12-29 1989-09-19 Nec Corporation Method of making insulated-gate field effect transistor
US4927777A (en) * 1989-01-24 1990-05-22 Harris Corporation Method of making a MOS transistor
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
USRE35094E (en) * 1989-04-03 1995-11-21 Atmel Corporation Fabrication process for programmable and erasable MOS memory device
US5464784A (en) * 1992-09-30 1995-11-07 Sgs-Thomson Microelectronics S.R.L. Method of fabricating integrated devices
US5568418A (en) * 1992-09-30 1996-10-22 Sgs-Thomson Microelectronics S.R.L. Non-volatile memory in an integrated circuit
US5798279A (en) * 1992-09-30 1998-08-25 Sgs-Thomson Microelectronics S.R.L. Method of fabricating non-volatile memories with overlapping layers
US5977586A (en) * 1992-09-30 1999-11-02 Stmicroelectronics S.R.L. Non-volatile integrated low-doped drain device with partially overlapping gate regions
JP2006335458A (en) * 2005-06-06 2006-12-14 Sanko Gosei Ltd Opening and closing lid with nozzle cap for packaging container

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