JPS5391672A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5391672A JPS5391672A JP656777A JP656777A JPS5391672A JP S5391672 A JPS5391672 A JP S5391672A JP 656777 A JP656777 A JP 656777A JP 656777 A JP656777 A JP 656777A JP S5391672 A JPS5391672 A JP S5391672A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- mask
- emitter
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase the HF performance, by forming the emitter layer from the doped polysilicon layer through Si3N4 mask hole, injecting ion through the mask, and making easy the mask alignment for the emitter and base.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP656777A JPS6022506B2 (en) | 1977-01-24 | 1977-01-24 | Manufacturing method for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP656777A JPS6022506B2 (en) | 1977-01-24 | 1977-01-24 | Manufacturing method for semiconductor devices |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1119884A Division JPS59218772A (en) | 1984-01-24 | 1984-01-24 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5391672A true JPS5391672A (en) | 1978-08-11 |
JPS6022506B2 JPS6022506B2 (en) | 1985-06-03 |
Family
ID=11641902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP656777A Expired JPS6022506B2 (en) | 1977-01-24 | 1977-01-24 | Manufacturing method for semiconductor devices |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6022506B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710969A (en) * | 1980-06-25 | 1982-01-20 | Nec Corp | Semiconductor device and manufacture thereof |
EP0052198A2 (en) * | 1980-09-26 | 1982-05-26 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices using self-alignment techniques |
JPS59218772A (en) * | 1984-01-24 | 1984-12-10 | Nec Corp | Manufacture of semiconductor device |
-
1977
- 1977-01-24 JP JP656777A patent/JPS6022506B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710969A (en) * | 1980-06-25 | 1982-01-20 | Nec Corp | Semiconductor device and manufacture thereof |
EP0052198A2 (en) * | 1980-09-26 | 1982-05-26 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices using self-alignment techniques |
EP0052198B1 (en) * | 1980-09-26 | 1985-12-27 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor devices using self-alignment techniques |
JPS59218772A (en) * | 1984-01-24 | 1984-12-10 | Nec Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6022506B2 (en) | 1985-06-03 |
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