JPS5391672A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5391672A
JPS5391672A JP656777A JP656777A JPS5391672A JP S5391672 A JPS5391672 A JP S5391672A JP 656777 A JP656777 A JP 656777A JP 656777 A JP656777 A JP 656777A JP S5391672 A JPS5391672 A JP S5391672A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
mask
emitter
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP656777A
Other languages
Japanese (ja)
Other versions
JPS6022506B2 (en
Inventor
Takaaki Kitada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP656777A priority Critical patent/JPS6022506B2/en
Publication of JPS5391672A publication Critical patent/JPS5391672A/en
Publication of JPS6022506B2 publication Critical patent/JPS6022506B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To increase the HF performance, by forming the emitter layer from the doped polysilicon layer through Si3N4 mask hole, injecting ion through the mask, and making easy the mask alignment for the emitter and base.
COPYRIGHT: (C)1978,JPO&Japio
JP656777A 1977-01-24 1977-01-24 Manufacturing method for semiconductor devices Expired JPS6022506B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP656777A JPS6022506B2 (en) 1977-01-24 1977-01-24 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP656777A JPS6022506B2 (en) 1977-01-24 1977-01-24 Manufacturing method for semiconductor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1119884A Division JPS59218772A (en) 1984-01-24 1984-01-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5391672A true JPS5391672A (en) 1978-08-11
JPS6022506B2 JPS6022506B2 (en) 1985-06-03

Family

ID=11641902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP656777A Expired JPS6022506B2 (en) 1977-01-24 1977-01-24 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6022506B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710969A (en) * 1980-06-25 1982-01-20 Nec Corp Semiconductor device and manufacture thereof
EP0052198A2 (en) * 1980-09-26 1982-05-26 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using self-alignment techniques
JPS59218772A (en) * 1984-01-24 1984-12-10 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710969A (en) * 1980-06-25 1982-01-20 Nec Corp Semiconductor device and manufacture thereof
EP0052198A2 (en) * 1980-09-26 1982-05-26 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using self-alignment techniques
EP0052198B1 (en) * 1980-09-26 1985-12-27 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices using self-alignment techniques
JPS59218772A (en) * 1984-01-24 1984-12-10 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6022506B2 (en) 1985-06-03

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