JPS5587446A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5587446A JPS5587446A JP16142278A JP16142278A JPS5587446A JP S5587446 A JPS5587446 A JP S5587446A JP 16142278 A JP16142278 A JP 16142278A JP 16142278 A JP16142278 A JP 16142278A JP S5587446 A JPS5587446 A JP S5587446A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- rays
- film
- layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To improve an electric current amplification drastically by a method wherein an overall surface of a semiconductor covered with an SiO2 film after having completed the formation of diode regions, is covered with an SiO2 film again by means of a spattering and irradiated with an X rays or γ rays, then processed for a heat treatment in non-oxidating atmosphere.
CONSTITUTION: An n-type layer 2 is subjected to an epitaxial growth on a p-type Si substrate 1 used as a base, in which a p+-type region reaching the substrate 1 is diffused to separate a layer 2 showing the insular shape. Then, a p-type collector and an emitter region 4 encircling the collector are formed by diffusion inside the separate layer 2. Thereafter, the overall surface is covered with SiO2 film 5 and in addition, SiO2 film 7 is adhered to be laminated over the surface by means of a spattering. Followed by this, these laminated films are pierced to make an apertures 8, while Al electrodes 6 are provided on each of the region 4 and the layer 2. Having been irradiated with a white X rays or γ rays, thereafter, the overall surface is processed for a heat treatment at approximately 400°C for 30min. or so in non-oxidating atmosphere with 10% of H2 and 90% of N2. By arranging such, an electric current amplification can be recovered drastically and the property of transistor can be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16142278A JPS5587446A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16142278A JPS5587446A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5587446A true JPS5587446A (en) | 1980-07-02 |
| JPS6216014B2 JPS6216014B2 (en) | 1987-04-10 |
Family
ID=15734792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16142278A Granted JPS5587446A (en) | 1978-12-25 | 1978-12-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5587446A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62204524A (en) * | 1986-03-04 | 1987-09-09 | Nec Corp | Manufacture of semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04119711U (en) * | 1991-04-10 | 1992-10-27 | しげる工業株式会社 | Fragrance release device in automobiles |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146882A (en) * | 1974-10-18 | 1976-04-21 | Mitsubishi Electric Corp | Handotaisochi oyobisono seizohoho |
-
1978
- 1978-12-25 JP JP16142278A patent/JPS5587446A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5146882A (en) * | 1974-10-18 | 1976-04-21 | Mitsubishi Electric Corp | Handotaisochi oyobisono seizohoho |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62204524A (en) * | 1986-03-04 | 1987-09-09 | Nec Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216014B2 (en) | 1987-04-10 |
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