JPS56142650A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56142650A
JPS56142650A JP4646380A JP4646380A JPS56142650A JP S56142650 A JPS56142650 A JP S56142650A JP 4646380 A JP4646380 A JP 4646380A JP 4646380 A JP4646380 A JP 4646380A JP S56142650 A JPS56142650 A JP S56142650A
Authority
JP
Japan
Prior art keywords
layer
type
base
type impurity
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4646380A
Other languages
Japanese (ja)
Other versions
JPH0133952B2 (en
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4646380A priority Critical patent/JPS56142650A/en
Publication of JPS56142650A publication Critical patent/JPS56142650A/en
Publication of JPH0133952B2 publication Critical patent/JPH0133952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To form a transistor having small junction capacity of a base and collector junction by forming a buried insulating layer in the transistor. CONSTITUTION:After an N<+> type buried layer 13 and an N type epitaxial growth layer 14 are formed on a P type silicon substrate 12, an SiO2 layer 15 is formed thereon by a selective oxidation method, and insulator regions 14, 14' are formed. Then, a thin layer 17 made of silicon having N type impurity is formed thereon, annealed by irradiating a laser beam or an electron beam thereon to convert the thin layer into a silicon crystal layer 17. After an oxide film 18 is formed by a selective oxidation method, a base region 3 is formed by introducing P type impurity, and an emitter region 4 and a collector electrode region 20 are formed by introducing N type impurity. Thus, the base and collector junction 5 can be localized only to the part directly under the emitter region 4 so as to reduce the junction capacity.
JP4646380A 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof Granted JPS56142650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4646380A JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4646380A JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56142650A true JPS56142650A (en) 1981-11-07
JPH0133952B2 JPH0133952B2 (en) 1989-07-17

Family

ID=12747853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4646380A Granted JPS56142650A (en) 1980-04-09 1980-04-09 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56142650A (en)

Also Published As

Publication number Publication date
JPH0133952B2 (en) 1989-07-17

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