JPS57112071A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57112071A
JPS57112071A JP18728980A JP18728980A JPS57112071A JP S57112071 A JPS57112071 A JP S57112071A JP 18728980 A JP18728980 A JP 18728980A JP 18728980 A JP18728980 A JP 18728980A JP S57112071 A JPS57112071 A JP S57112071A
Authority
JP
Japan
Prior art keywords
layer
collector
region
buried
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18728980A
Other languages
Japanese (ja)
Inventor
Katsuharu Mitono
Yuki Shimauchi
Yasushi Yasuda
Akinori Tawara
Hiroshi Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18728980A priority Critical patent/JPS57112071A/en
Publication of JPS57112071A publication Critical patent/JPS57112071A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the series resistance of a collector and obtain a high speed device by a method wherein after a metal layer such as Mo is formed on a surface of a buried collector region of a bipolar transistor an epitaxial layer is grown and an element is composed. CONSTITUTION:A metal layer 9 such as Mo is formed on a surface of a n<+> buried layer 6 formed by diffusion in a p type substrate 1 and epitaxial growth of a n type layer 2 is made. A polycrystal layer formed on the metal layer 9 is annealed by laser to be monocrystallinized, then, by a conventional method, separating layers 7, a base region 3, on emitter region 4 and a collector contact region 5 are successively formed and electrodes E, B and C are formed, so that a transistor is composed. With above configuration the resistance of the buried collector region is reduced substantially and the swelling of the n<+> buried layer 6 into the base region is decreased, so that the capacity between the collector and the base becomes smaller, thus a high speed device can be obtained.
JP18728980A 1980-12-29 1980-12-29 Semiconductor device Pending JPS57112071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18728980A JPS57112071A (en) 1980-12-29 1980-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18728980A JPS57112071A (en) 1980-12-29 1980-12-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57112071A true JPS57112071A (en) 1982-07-12

Family

ID=16203386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18728980A Pending JPS57112071A (en) 1980-12-29 1980-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57112071A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8080863B2 (en) * 2006-07-28 2011-12-20 Keiji Mita Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8080863B2 (en) * 2006-07-28 2011-12-20 Keiji Mita Semiconductor device and method of manufacturing the same

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