JPS54101666A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54101666A
JPS54101666A JP874578A JP874578A JPS54101666A JP S54101666 A JPS54101666 A JP S54101666A JP 874578 A JP874578 A JP 874578A JP 874578 A JP874578 A JP 874578A JP S54101666 A JPS54101666 A JP S54101666A
Authority
JP
Japan
Prior art keywords
electrode materials
gaas
semiconductor device
evaporated
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP874578A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP874578A priority Critical patent/JPS54101666A/en
Publication of JPS54101666A publication Critical patent/JPS54101666A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To lower a contact resistance and reduce irregularity by using electrode materials including Ga in electrode materials by which the ohmic contact to GaAs is formed.
CONSTITUTION: Au, Ge and Ga 2 are evaporated on n-type GaAs 1, which has the surface smoothed by mechanical and chemical methods and has a carrier density of n≃1016cm-3, by the vacuum evaporation method and are subjected to heat treatment in an inactive gas atmosphere, thereby forming alloy layer 2'.
COPYRIGHT: (C)1979,JPO&Japio
JP874578A 1978-01-27 1978-01-27 Semiconductor device Pending JPS54101666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP874578A JPS54101666A (en) 1978-01-27 1978-01-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP874578A JPS54101666A (en) 1978-01-27 1978-01-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54101666A true JPS54101666A (en) 1979-08-10

Family

ID=11701461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP874578A Pending JPS54101666A (en) 1978-01-27 1978-01-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101666A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111367A (en) * 1981-12-25 1983-07-02 Agency Of Ind Science & Technol Manufacture of semiconductor device
CN109273357A (en) * 2018-09-28 2019-01-25 中科芯电半导体科技（北京）有限公司 Improve the method for low doping concentration material surface Ohmic contact and the low doping concentration material of surface growth Ga metal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141974A (en) * 1974-05-02 1975-11-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50141974A (en) * 1974-05-02 1975-11-15

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111367A (en) * 1981-12-25 1983-07-02 Agency Of Ind Science & Technol Manufacture of semiconductor device
JPS6351390B2 (en) * 1981-12-25 1988-10-13 Kogyo Gijutsuin
CN109273357A (en) * 2018-09-28 2019-01-25 中科芯电半导体科技（北京）有限公司 Improve the method for low doping concentration material surface Ohmic contact and the low doping concentration material of surface growth Ga metal
CN109273357B (en) * 2018-09-28 2021-03-23 中科芯电半导体科技（北京）有限公司 Method and material for improving ohmic contact on surface of low-doping concentration material

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