JPS5513981A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5513981A JPS5513981A JP8757178A JP8757178A JPS5513981A JP S5513981 A JPS5513981 A JP S5513981A JP 8757178 A JP8757178 A JP 8757178A JP 8757178 A JP8757178 A JP 8757178A JP S5513981 A JPS5513981 A JP S5513981A
- Authority
- JP
- Japan
- Prior art keywords
- area
- contact
- layer
- type
- diffusion area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain complete ohmic contact by forming low density diffusion area in contact with high density diffusion area formed in an inside wiring area, and by forming a junction for a contact terminal in this area.
CONSTITUTION: An inside wiring contact layer 10 is formed in the area larger than a separation diffusion area 4 at the same time when a base diffusion area 5 is formed. The part composed of the area 4 surface that is half the size of the layer 10 becomes high density diffusion area 10a due to the formation by p type of the same conductivity in the area 4 of highly dense p type, and the part formed on the other half of the epi-layer 3 surface becomes low density diffusion area 10b due to the formation by p type with conductivity different from n type epi-layer 3. On the surface of the area 10b is formed a window 7a for contact terminal of the inside wiring, and the junction for a contact termainal of the inside wiring is done by forming Al on this window 7a. Thus, a complete ohmic contact can be obtained since the impurity density is low on the surface of the area 10b.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8757178A JPS5932067B2 (en) | 1978-07-17 | 1978-07-17 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8757178A JPS5932067B2 (en) | 1978-07-17 | 1978-07-17 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5513981A true JPS5513981A (en) | 1980-01-31 |
JPS5932067B2 JPS5932067B2 (en) | 1984-08-06 |
Family
ID=13918676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8757178A Expired JPS5932067B2 (en) | 1978-07-17 | 1978-07-17 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5932067B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010928U (en) * | 1983-12-02 | 1985-01-25 | 株式会社大金製作所 | damper disk |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6085172A (en) * | 1983-10-13 | 1985-05-14 | 株式会社デンソー | Automatic release apparatus for car door lock system |
-
1978
- 1978-07-17 JP JP8757178A patent/JPS5932067B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6010928U (en) * | 1983-12-02 | 1985-01-25 | 株式会社大金製作所 | damper disk |
Also Published As
Publication number | Publication date |
---|---|
JPS5932067B2 (en) | 1984-08-06 |
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