JPS5541704A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5541704A JPS5541704A JP11362378A JP11362378A JPS5541704A JP S5541704 A JPS5541704 A JP S5541704A JP 11362378 A JP11362378 A JP 11362378A JP 11362378 A JP11362378 A JP 11362378A JP S5541704 A JPS5541704 A JP S5541704A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- polycrystal
- semiconductor device
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 5
- 230000003647 oxidation Effects 0.000 abstract 5
- 238000007254 oxidation reaction Methods 0.000 abstract 5
- 238000001259 photo etching Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To obtain a semiconductor device having a excellent characteristics with a simple process by forming partially polycrystal Si film, after a polycrystal Si film is formed selectively using a photo-etching method and then an oxidation film is formed by oxidating the Si film in high temperature vapor atmosphere.
CONSTITUTION: The oxidation film 22 is formed on the surface of Si base 21 with a thermal oxidation method, and further the polycrystal Si film 23 is formed on the surface. P or As is diffused into the Si film 23 with a gas phase diffusion method. Then, the film 23 is formed selectively with a ordinary photo-etching method and further, after the oxidation film 24 is formed by oxidation in the vapor atmosphere of about 900°C, the polycrystal Si film 25 is formed. By so doing, the semiconductor device having a excellent characteristics is obtained with this simple process.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362378A JPS5541704A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11362378A JPS5541704A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5541704A true JPS5541704A (en) | 1980-03-24 |
Family
ID=14616901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11362378A Pending JPS5541704A (en) | 1978-09-18 | 1978-09-18 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541704A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56137657A (en) * | 1980-03-29 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS56144535A (en) * | 1980-04-11 | 1981-11-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS56160062A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4714739A (en) * | 1982-04-20 | 1987-12-22 | Petrarch Systems Inc. | Curable silicone semi-interpenetrating polymer networks and methods of making same |
| USRE33070E (en) * | 1982-04-20 | 1989-09-26 | Petrarch Systems Inc. | Curable silicone containing compositions and methods of making same |
-
1978
- 1978-09-18 JP JP11362378A patent/JPS5541704A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56137657A (en) * | 1980-03-29 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS56144535A (en) * | 1980-04-11 | 1981-11-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS56160062A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4714739A (en) * | 1982-04-20 | 1987-12-22 | Petrarch Systems Inc. | Curable silicone semi-interpenetrating polymer networks and methods of making same |
| USRE33070E (en) * | 1982-04-20 | 1989-09-26 | Petrarch Systems Inc. | Curable silicone containing compositions and methods of making same |
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