JPS5398779A - Manufacture for silicon oxide film - Google Patents

Manufacture for silicon oxide film

Info

Publication number
JPS5398779A
JPS5398779A JP1296377A JP1296377A JPS5398779A JP S5398779 A JPS5398779 A JP S5398779A JP 1296377 A JP1296377 A JP 1296377A JP 1296377 A JP1296377 A JP 1296377A JP S5398779 A JPS5398779 A JP S5398779A
Authority
JP
Japan
Prior art keywords
manufacture
oxide film
silicon oxide
wafer
given
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1296377A
Other languages
Japanese (ja)
Other versions
JPS567293B2 (en
Inventor
Kohei Ebara
Kuniki Owada
Masanobu Doken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1296377A priority Critical patent/JPS5398779A/en
Publication of JPS5398779A publication Critical patent/JPS5398779A/en
Publication of JPS567293B2 publication Critical patent/JPS567293B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain the SiO2 film whivh is small for the boundary level density, stable, and produces no deficient lattice in the wafer, by mixing the gas of three types such as O2, HCl, and H2 with a given mixing rate in the order of a given timing and by heating the Si wafer under this atmosphere.
COPYRIGHT: (C)1978,JPO&Japio
JP1296377A 1977-02-10 1977-02-10 Manufacture for silicon oxide film Granted JPS5398779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1296377A JPS5398779A (en) 1977-02-10 1977-02-10 Manufacture for silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1296377A JPS5398779A (en) 1977-02-10 1977-02-10 Manufacture for silicon oxide film

Publications (2)

Publication Number Publication Date
JPS5398779A true JPS5398779A (en) 1978-08-29
JPS567293B2 JPS567293B2 (en) 1981-02-17

Family

ID=11819899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1296377A Granted JPS5398779A (en) 1977-02-10 1977-02-10 Manufacture for silicon oxide film

Country Status (1)

Country Link
JP (1) JPS5398779A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987821A (en) * 1982-11-11 1984-05-21 Seiko Epson Corp Oxidization
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
FR2736341A1 (en) * 1995-07-06 1997-01-10 Sumitomo Chemical Co PROCESS FOR THE PRODUCTION OF A METAL OXIDE POWDER BY HEATING METALS IN A GASEOUS MIXTURE

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02126384U (en) * 1989-03-29 1990-10-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987821A (en) * 1982-11-11 1984-05-21 Seiko Epson Corp Oxidization
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
FR2736341A1 (en) * 1995-07-06 1997-01-10 Sumitomo Chemical Co PROCESS FOR THE PRODUCTION OF A METAL OXIDE POWDER BY HEATING METALS IN A GASEOUS MIXTURE

Also Published As

Publication number Publication date
JPS567293B2 (en) 1981-02-17

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