JPS53105975A - Heat treatment for silicon oxide film - Google Patents
Heat treatment for silicon oxide filmInfo
- Publication number
- JPS53105975A JPS53105975A JP2035777A JP2035777A JPS53105975A JP S53105975 A JPS53105975 A JP S53105975A JP 2035777 A JP2035777 A JP 2035777A JP 2035777 A JP2035777 A JP 2035777A JP S53105975 A JPS53105975 A JP S53105975A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- oxide film
- silicon oxide
- substrate
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To reduce greatly the interface charge between SiO2 and the Si substrate and to increase the element quality as well as the yield, by giving a high-t emperature annealing in the N2 atmosphere including O2 after an oxidation treatment of the Si substrate and then a low-temperature annealing in an inactive gas atmosphere in cluding 2-20% H2.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2035777A JPS53105975A (en) | 1977-02-28 | 1977-02-28 | Heat treatment for silicon oxide film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2035777A JPS53105975A (en) | 1977-02-28 | 1977-02-28 | Heat treatment for silicon oxide film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53105975A true JPS53105975A (en) | 1978-09-14 |
Family
ID=12024846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2035777A Pending JPS53105975A (en) | 1977-02-28 | 1977-02-28 | Heat treatment for silicon oxide film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53105975A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376592A (en) * | 1992-01-21 | 1994-12-27 | Sony Corporation | Method of heat-treating a semiconductor wafer to determine processing conditions |
JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
-
1977
- 1977-02-28 JP JP2035777A patent/JPS53105975A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376592A (en) * | 1992-01-21 | 1994-12-27 | Sony Corporation | Method of heat-treating a semiconductor wafer to determine processing conditions |
JPH07321061A (en) * | 1994-10-03 | 1995-12-08 | Sony Corp | Manufacture of semiconductor device |
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