JPS53105975A - Heat treatment for silicon oxide film - Google Patents

Heat treatment for silicon oxide film

Info

Publication number
JPS53105975A
JPS53105975A JP2035777A JP2035777A JPS53105975A JP S53105975 A JPS53105975 A JP S53105975A JP 2035777 A JP2035777 A JP 2035777A JP 2035777 A JP2035777 A JP 2035777A JP S53105975 A JPS53105975 A JP S53105975A
Authority
JP
Japan
Prior art keywords
heat treatment
oxide film
silicon oxide
substrate
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2035777A
Other languages
Japanese (ja)
Inventor
Kohei Funahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2035777A priority Critical patent/JPS53105975A/en
Publication of JPS53105975A publication Critical patent/JPS53105975A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To reduce greatly the interface charge between SiO2 and the Si substrate and to increase the element quality as well as the yield, by giving a high-t emperature annealing in the N2 atmosphere including O2 after an oxidation treatment of the Si substrate and then a low-temperature annealing in an inactive gas atmosphere in cluding 2-20% H2.
COPYRIGHT: (C)1978,JPO&Japio
JP2035777A 1977-02-28 1977-02-28 Heat treatment for silicon oxide film Pending JPS53105975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2035777A JPS53105975A (en) 1977-02-28 1977-02-28 Heat treatment for silicon oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2035777A JPS53105975A (en) 1977-02-28 1977-02-28 Heat treatment for silicon oxide film

Publications (1)

Publication Number Publication Date
JPS53105975A true JPS53105975A (en) 1978-09-14

Family

ID=12024846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2035777A Pending JPS53105975A (en) 1977-02-28 1977-02-28 Heat treatment for silicon oxide film

Country Status (1)

Country Link
JP (1) JPS53105975A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376592A (en) * 1992-01-21 1994-12-27 Sony Corporation Method of heat-treating a semiconductor wafer to determine processing conditions
JPH07321061A (en) * 1994-10-03 1995-12-08 Sony Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376592A (en) * 1992-01-21 1994-12-27 Sony Corporation Method of heat-treating a semiconductor wafer to determine processing conditions
JPH07321061A (en) * 1994-10-03 1995-12-08 Sony Corp Manufacture of semiconductor device

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