JPS544069A - Producing method of oxide film - Google Patents

Producing method of oxide film

Info

Publication number
JPS544069A
JPS544069A JP6890777A JP6890777A JPS544069A JP S544069 A JPS544069 A JP S544069A JP 6890777 A JP6890777 A JP 6890777A JP 6890777 A JP6890777 A JP 6890777A JP S544069 A JPS544069 A JP S544069A
Authority
JP
Japan
Prior art keywords
oxide film
producing method
hfe
dispersion
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6890777A
Other languages
Japanese (ja)
Inventor
Kousuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6890777A priority Critical patent/JPS544069A/en
Publication of JPS544069A publication Critical patent/JPS544069A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the dispersion in hFE, by preventing bending of semiconductor wafer and life time killer, through performing gradual heating and cooling processes under reducing atmosphere.
COPYRIGHT: (C)1979,JPO&Japio
JP6890777A 1977-06-13 1977-06-13 Producing method of oxide film Pending JPS544069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6890777A JPS544069A (en) 1977-06-13 1977-06-13 Producing method of oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6890777A JPS544069A (en) 1977-06-13 1977-06-13 Producing method of oxide film

Publications (1)

Publication Number Publication Date
JPS544069A true JPS544069A (en) 1979-01-12

Family

ID=13387182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6890777A Pending JPS544069A (en) 1977-06-13 1977-06-13 Producing method of oxide film

Country Status (1)

Country Link
JP (1) JPS544069A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190173A (en) * 1987-02-02 1988-08-05 Tokyo Electron Ltd Plasma treating device
US6593253B1 (en) 1997-12-24 2003-07-15 Asahi Kasei Microsystems Co., Ltd. Method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190173A (en) * 1987-02-02 1988-08-05 Tokyo Electron Ltd Plasma treating device
US6593253B1 (en) 1997-12-24 2003-07-15 Asahi Kasei Microsystems Co., Ltd. Method of manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPS5430777A (en) Manufacture of semiconductor device
JPS5390033A (en) Heat treatment equipment
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS544069A (en) Producing method of oxide film
JPS54978A (en) Semiconductor device of glass seal type
JPS5420671A (en) Production of semiconductor devices
JPS5345177A (en) Production of semiconductor device
JPS5230171A (en) Method for fabrication of semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5343473A (en) Impurity driving-in method
JPS5228879A (en) Semiconductor device and method for its production
JPS51114870A (en) Semiconductor device manufacturing method
JPS53108373A (en) Manufacture for semiconductor device
JPS5248978A (en) Process for production of semiconductor device
JPS5320862A (en) Production of semiconductor device
JPS52144960A (en) Inspecting method of semiconductor wafers
JPS51145267A (en) Manufacture of semiconductor device
JPS53105975A (en) Heat treatment for silicon oxide film
JPS52179A (en) Method of fabricating semiconductor
JPS52129275A (en) Impurity diffusion method
JPS53142168A (en) Reproductive use of semiconductor substrate
JPS54153569A (en) Heat treatment method for semiconductor wafer
JPS5382166A (en) Electrode forming mrthod of semiconductor device
JPS5367362A (en) Manufacture of semiconductor device
JPS5375758A (en) Heat processing method of semiconductor device