JPS5419663A - Forming method of insulating films - Google Patents
Forming method of insulating filmsInfo
- Publication number
- JPS5419663A JPS5419663A JP8477677A JP8477677A JPS5419663A JP S5419663 A JPS5419663 A JP S5419663A JP 8477677 A JP8477677 A JP 8477677A JP 8477677 A JP8477677 A JP 8477677A JP S5419663 A JPS5419663 A JP S5419663A
- Authority
- JP
- Japan
- Prior art keywords
- forming method
- insulating films
- substrates
- films
- dense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To let N2 atoms directly react with Si substrates and obtain stable and dense Si3N4 films by heating the Si substrates in an atmosphere of NH3 containing less than 0.01% of O2, H2O or gas containing NH3.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8477677A JPS5419663A (en) | 1977-07-15 | 1977-07-15 | Forming method of insulating films |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8477677A JPS5419663A (en) | 1977-07-15 | 1977-07-15 | Forming method of insulating films |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5419663A true JPS5419663A (en) | 1979-02-14 |
JPS5645299B2 JPS5645299B2 (en) | 1981-10-26 |
Family
ID=13840072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8477677A Granted JPS5419663A (en) | 1977-07-15 | 1977-07-15 | Forming method of insulating films |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5419663A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001740A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing semiconductor devices |
WO1980001739A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing insulating film for semiconductor surfaces |
JPS5754332A (en) * | 1980-09-19 | 1982-03-31 | Nec Corp | Forming method for thermonitride silicon film |
WO1983000773A1 (en) * | 1979-02-27 | 1983-03-03 | Takao Nozaki | Method of producing semiconductor devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5199980A (en) * | 1975-02-28 | 1976-09-03 | Fujitsu Ltd | mis gatahandotaisochi |
JPS51103774A (en) * | 1975-03-10 | 1976-09-13 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
JPS51105270A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | HANDOTAIHYOMENZETSUENMAKUNO KEISEIHOHO |
-
1977
- 1977-07-15 JP JP8477677A patent/JPS5419663A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5199980A (en) * | 1975-02-28 | 1976-09-03 | Fujitsu Ltd | mis gatahandotaisochi |
JPS51103774A (en) * | 1975-03-10 | 1976-09-13 | Fujitsu Ltd | HANDOTAISOCHINOSEIZOHOHO |
JPS51105270A (en) * | 1975-03-13 | 1976-09-17 | Fujitsu Ltd | HANDOTAIHYOMENZETSUENMAKUNO KEISEIHOHO |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1980001740A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing semiconductor devices |
WO1980001739A1 (en) * | 1979-02-19 | 1980-08-21 | Fujitsu Ltd | Method of producing insulating film for semiconductor surfaces |
WO1983000773A1 (en) * | 1979-02-27 | 1983-03-03 | Takao Nozaki | Method of producing semiconductor devices |
JPS5754332A (en) * | 1980-09-19 | 1982-03-31 | Nec Corp | Forming method for thermonitride silicon film |
Also Published As
Publication number | Publication date |
---|---|
JPS5645299B2 (en) | 1981-10-26 |
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