JPS5754332A - Forming method for thermonitride silicon film - Google Patents

Forming method for thermonitride silicon film

Info

Publication number
JPS5754332A
JPS5754332A JP55130502A JP13050280A JPS5754332A JP S5754332 A JPS5754332 A JP S5754332A JP 55130502 A JP55130502 A JP 55130502A JP 13050280 A JP13050280 A JP 13050280A JP S5754332 A JPS5754332 A JP S5754332A
Authority
JP
Japan
Prior art keywords
thermonitride
film
wafer
heated
reaction pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55130502A
Other languages
Japanese (ja)
Inventor
Toshio Baba
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55130502A priority Critical patent/JPS5754332A/en
Publication of JPS5754332A publication Critical patent/JPS5754332A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent O2 from mixing in a nitride film by conducting a pretreatment process wherein Si is heated in an evacuated reaction pipe, heating the Si in the atmosphere of N2 or nitrogeneous compound gas and thereby forming a thermonitride film. CONSTITUTION:The reaction pipe having a packing 8 whereby the closensess of contact between a core pipe 3 and cap 5 is made excellent is filled up with inert gas. An Si wafer is put in the reaction pipe and, the degree of vacuum of the pupe being raised to 10<-6> Torr approximately, it is heated for 1-2hr at a temperature causing no oxidation by oxidizing adsorbed substances, whereby the adsorbed substances on the surface thereof is removed. Next, ater the wafer is heated preliminarily up to 900-1,300 deg.C, nitrogen gas is introduced and the thermonitride Si film is formed on the wafer 1. Since O2 is prevented from mixing in the nitride film nearly completely by this constitution, the thermonitride film having an excellent quality is obtained.
JP55130502A 1980-09-19 1980-09-19 Forming method for thermonitride silicon film Pending JPS5754332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130502A JPS5754332A (en) 1980-09-19 1980-09-19 Forming method for thermonitride silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130502A JPS5754332A (en) 1980-09-19 1980-09-19 Forming method for thermonitride silicon film

Publications (1)

Publication Number Publication Date
JPS5754332A true JPS5754332A (en) 1982-03-31

Family

ID=15035799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130502A Pending JPS5754332A (en) 1980-09-19 1980-09-19 Forming method for thermonitride silicon film

Country Status (1)

Country Link
JP (1) JPS5754332A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684637A3 (en) * 1994-05-27 1996-09-25 Toshiba Kk Semiconductor device having a thermal nitride film and manufacturing method thereof.
US10941946B2 (en) 2018-03-02 2021-03-09 Lg Electronics Inc. Oven equipped with automatically ascending/descending tray

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419663A (en) * 1977-07-15 1979-02-14 Fujitsu Ltd Forming method of insulating films

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419663A (en) * 1977-07-15 1979-02-14 Fujitsu Ltd Forming method of insulating films

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684637A3 (en) * 1994-05-27 1996-09-25 Toshiba Kk Semiconductor device having a thermal nitride film and manufacturing method thereof.
US5838056A (en) * 1994-05-27 1998-11-17 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film and manufacturing method thereof
US6171977B1 (en) 1994-05-27 2001-01-09 Kabushiki Kaisha Toshiba Semiconductor device applied to composite insulative film manufacturing method thereof
US10941946B2 (en) 2018-03-02 2021-03-09 Lg Electronics Inc. Oven equipped with automatically ascending/descending tray

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