JPS571232A - Oxide film forming device - Google Patents

Oxide film forming device

Info

Publication number
JPS571232A
JPS571232A JP7590780A JP7590780A JPS571232A JP S571232 A JPS571232 A JP S571232A JP 7590780 A JP7590780 A JP 7590780A JP 7590780 A JP7590780 A JP 7590780A JP S571232 A JPS571232 A JP S571232A
Authority
JP
Japan
Prior art keywords
wafer
oxide film
reaction chamber
gas
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7590780A
Other languages
Japanese (ja)
Inventor
Kazuo Mizuguchi
Shigeji Kinoshita
Kazuo Ito
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7590780A priority Critical patent/JPS571232A/en
Publication of JPS571232A publication Critical patent/JPS571232A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To delay the formation speed of an oxide film at a high temperature as well as to improve the uniformity and reproducibility of the oxide film of high quality by a method wherein the reaction chamber in which oxidized gas was induced is put in a decompressed condition and an oxidation by heat is performed on an Si wafer and the like under the decompressed condition. CONSTITUTION:For example, a plurality of Si wafers 3 placed on a boat 4 are put in a reaction chamber 1, oxidized gas is feeded from the lead-in port 5 provided at one end of the reaction chamber 1 and the reaction chamber 1 is decompressed (atmospheric pressure -0.1torr or thereabouts) from the other end using an exhaust system. The wafer 3 will be oxidized by heat under the decompressed condition, and as an oxidizing gas, the gas which is obtained by burning O2 or O2 and H2 that are diluted with the inert gas O2, N2 or Ar and the like and used. Through these procedures, as the oxidation speed of the wafer 3 can be suppressed, the thin oxide film of high quality to be usee as the gate film of MOSLSI can be formed and the uniformity of the formed oxidation film inside the wafer and in between the wafer and the reproducibility between processing batch can be improved as well.
JP7590780A 1980-06-04 1980-06-04 Oxide film forming device Pending JPS571232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7590780A JPS571232A (en) 1980-06-04 1980-06-04 Oxide film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7590780A JPS571232A (en) 1980-06-04 1980-06-04 Oxide film forming device

Publications (1)

Publication Number Publication Date
JPS571232A true JPS571232A (en) 1982-01-06

Family

ID=13589869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7590780A Pending JPS571232A (en) 1980-06-04 1980-06-04 Oxide film forming device

Country Status (1)

Country Link
JP (1) JPS571232A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
US6869892B1 (en) 2004-01-30 2005-03-22 Tokyo Electron Limited Method of oxidizing work pieces and oxidation system
JP2005311301A (en) * 2004-03-24 2005-11-04 Tokyo Electron Ltd Oxidizing method and oxidizing apparatus of workpiece, and storage medium
US7125811B2 (en) 2003-08-29 2006-10-24 Tokyo Electron Limited Oxidation method for semiconductor process
US7129186B2 (en) 2003-11-20 2006-10-31 Tokyo Electron Limited Oxidation method and oxidation system
US7304002B2 (en) 2002-07-05 2007-12-04 Tokyo Electron Limited Method of oxidizing member to be treated
JP2008060456A (en) * 2006-09-01 2008-03-13 Tokyo Electron Ltd Workpiece oxidizing method, oxidizing apparatus, and memory medium
US7419550B2 (en) 2004-02-17 2008-09-02 Tokyo Electron Limited Oxidizing method and oxidizing unit of object for object to be processed
US7452826B2 (en) 2003-11-20 2008-11-18 Tokyo Electron Limited Oxidation method and oxidation system
US7605095B2 (en) 2007-02-14 2009-10-20 Tokyo Electron Limited Heat processing method and apparatus for semiconductor process
US8124181B2 (en) 2006-10-20 2012-02-28 Tokyo Electron Limited Oxidation method providing parallel gas flow over substrates in a semiconductor process
US8153534B2 (en) 2006-09-22 2012-04-10 Tokyo Electron Limited Direct oxidation method for semiconductor process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830379A (en) * 1971-08-20 1973-04-21
JPS4940873A (en) * 1972-08-25 1974-04-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830379A (en) * 1971-08-20 1973-04-21
JPS4940873A (en) * 1972-08-25 1974-04-17

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
US7304002B2 (en) 2002-07-05 2007-12-04 Tokyo Electron Limited Method of oxidizing member to be treated
US7125811B2 (en) 2003-08-29 2006-10-24 Tokyo Electron Limited Oxidation method for semiconductor process
US7452826B2 (en) 2003-11-20 2008-11-18 Tokyo Electron Limited Oxidation method and oxidation system
US7129186B2 (en) 2003-11-20 2006-10-31 Tokyo Electron Limited Oxidation method and oxidation system
US6869892B1 (en) 2004-01-30 2005-03-22 Tokyo Electron Limited Method of oxidizing work pieces and oxidation system
US7419550B2 (en) 2004-02-17 2008-09-02 Tokyo Electron Limited Oxidizing method and oxidizing unit of object for object to be processed
US7674724B2 (en) 2004-02-17 2010-03-09 Tokyo Electron Limited Oxidizing method and oxidizing unit for object to be processed
US7304003B2 (en) 2004-03-24 2007-12-04 Tokyo Electron Limited Oxidizing method and oxidizing unit for object to be processed
JP2005311301A (en) * 2004-03-24 2005-11-04 Tokyo Electron Ltd Oxidizing method and oxidizing apparatus of workpiece, and storage medium
JP4609098B2 (en) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 Process for oxidizing object, oxidation apparatus and storage medium
US7926445B2 (en) 2004-03-24 2011-04-19 Tokyo Electron Limited Oxidizing method and oxidizing unit for object to be processed
JP2008060456A (en) * 2006-09-01 2008-03-13 Tokyo Electron Ltd Workpiece oxidizing method, oxidizing apparatus, and memory medium
US7795158B2 (en) 2006-09-01 2010-09-14 Tokyo Electron Limited Oxidation method and apparatus for semiconductor process
US8153534B2 (en) 2006-09-22 2012-04-10 Tokyo Electron Limited Direct oxidation method for semiconductor process
US8124181B2 (en) 2006-10-20 2012-02-28 Tokyo Electron Limited Oxidation method providing parallel gas flow over substrates in a semiconductor process
US7605095B2 (en) 2007-02-14 2009-10-20 Tokyo Electron Limited Heat processing method and apparatus for semiconductor process

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