JPS57180135A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57180135A
JPS57180135A JP56064051A JP6405181A JPS57180135A JP S57180135 A JPS57180135 A JP S57180135A JP 56064051 A JP56064051 A JP 56064051A JP 6405181 A JP6405181 A JP 6405181A JP S57180135 A JPS57180135 A JP S57180135A
Authority
JP
Japan
Prior art keywords
psg film
gas
film
temperature
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56064051A
Other languages
Japanese (ja)
Inventor
Yoshimi Shiotani
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56064051A priority Critical patent/JPS57180135A/en
Publication of JPS57180135A publication Critical patent/JPS57180135A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the quality of a PSG film by a method wherein a PSG film which contains less oxygen than the stoichiometric composition is formed on a semiconductor substrate and the film is annealed in O2 gas or wet O2 gas at the temperature not higher than the specific temperature. CONSTITUTION:When a PSG film is forms on an Si substrate1 by reduced pressure CVD method and plasma CVD method, a PSG film which contains less oxygen than the stoichiometric composition is formed by, for instance, making O2/(SiH4+PH3) less than 2 when gases such as SiH4, O2 or PH3 are introduced into a reaction tube. Then the PSG film is annealed in O2 gas or wet O2 gas at the temperature not higher than 900 deg.C. With the constitution, the segregation of P at the boundary of the PSG film and the Si substrate generated by the causes such as the diffusion process or the glass flow is avoided even in the thermal treatment in N2 atmosphere. Accordingly, when the PSG film is etched, the secular change of the etching rate is reduced and the abnormal diffusion is also reduced.
JP56064051A 1981-04-30 1981-04-30 Manufacture of semiconductor device Pending JPS57180135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064051A JPS57180135A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064051A JPS57180135A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57180135A true JPS57180135A (en) 1982-11-06

Family

ID=13246901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064051A Pending JPS57180135A (en) 1981-04-30 1981-04-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180135A (en)

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