JPS5710242A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5710242A
JPS5710242A JP8481280A JP8481280A JPS5710242A JP S5710242 A JPS5710242 A JP S5710242A JP 8481280 A JP8481280 A JP 8481280A JP 8481280 A JP8481280 A JP 8481280A JP S5710242 A JPS5710242 A JP S5710242A
Authority
JP
Japan
Prior art keywords
pressure
gas
reacting tube
substrate
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8481280A
Other languages
Japanese (ja)
Inventor
Hirokazu Miyoshi
Makoto Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8481280A priority Critical patent/JPS5710242A/en
Publication of JPS5710242A publication Critical patent/JPS5710242A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a thick Si nitride film with excellent quality on the surface of a substrate at a reratively low temperature by heat-treating the Si substrate and directly nitriding it in a gaseous atmosphere containing NH3 or N2 at a pressure higher than atmospheric pressure. CONSTITUTION:Purified Si wafers 2 are enclosed in a high pressure reacting tube 9 which is heated by a furnace 1. Then, NH3 gas is introduced into the reacting tube 9 from a gas source 8 through a moisture and oxygen removing device 7, a pressure flow control system 6, and an NH3 gas introducing system 11. Likewise, N2 gas is introduced into a pressure resistant container 10 through an N2 gas introducing system 13. For example, an Si3N4 film having few boundary charges, excellent dielectric strength, and thickness of 350Angstrom can be formed on the wafer surface by performing treatment in the reacting tube at the internal pressure of 3kg/cm<2> and at the temperature of 900 deg.C for three hours. Thus a nitride film suitable for MIS type elements can be formed.
JP8481280A 1980-06-20 1980-06-20 Manufacture of semiconductor device Pending JPS5710242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8481280A JPS5710242A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8481280A JPS5710242A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710242A true JPS5710242A (en) 1982-01-19

Family

ID=13841134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8481280A Pending JPS5710242A (en) 1980-06-20 1980-06-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710242A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674788A (en) * 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
CN109196621A (en) * 2016-06-01 2019-01-11 应用材料公司 The high pressure ammonia nitriding of tunnel oxide for 3DNAND application

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518054A (en) * 1978-07-25 1980-02-07 Nec Corp Fabricating method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518054A (en) * 1978-07-25 1980-02-07 Nec Corp Fabricating method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674788A (en) * 1995-06-06 1997-10-07 Advanced Micro Devices, Inc. Method of forming high pressure silicon oxynitride gate dielectrics
CN109196621A (en) * 2016-06-01 2019-01-11 应用材料公司 The high pressure ammonia nitriding of tunnel oxide for 3DNAND application
JP2019518333A (en) * 2016-06-01 2019-06-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ammonia nitridation at high pressure of tunnel oxide for 3D NAND
US10870911B2 (en) 2016-06-01 2020-12-22 Applied Materials, Inc. High pressure ammonia nitridation of tunnel oxide for 3DNAND applications
CN109196621B (en) * 2016-06-01 2023-09-05 应用材料公司 High pressure ammoniation of tunnel oxides for 3d nand applications

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