JPS5737824A - Method and device for impurity diffusion - Google Patents

Method and device for impurity diffusion

Info

Publication number
JPS5737824A
JPS5737824A JP11416680A JP11416680A JPS5737824A JP S5737824 A JPS5737824 A JP S5737824A JP 11416680 A JP11416680 A JP 11416680A JP 11416680 A JP11416680 A JP 11416680A JP S5737824 A JPS5737824 A JP S5737824A
Authority
JP
Japan
Prior art keywords
quartz tube
condition
diffusion source
wafers
impurity gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11416680A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11416680A priority Critical patent/JPS5737824A/en
Publication of JPS5737824A publication Critical patent/JPS5737824A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To improve uniformity in a wafer and between wafers by a method wherein in a device being in depressurized condition at less than one atmospheric pressure and is heating substrates, an imprity soutce consisted of a gaseous body or evaporated gas from a liquid is introduced and is made to diffuse. CONSTITUTION:The plural wafers 3 put on a jig 2 are accomodated in a quartz tube 1, and are heated at the prescribed temperature. In the depressuized condition of the inside of quartz tube by a vacuum pump 5, the impurity gas is supplied from an evaporator 7 of a liquid diffusion source (BBr3, etc., for example) held at a constant temperature with an electronic cooling and heating devidce 6, for example. Because the inside of the quartz tube is held at the depressuized condition and impurity gas in the quartz tube has the large average free path, the impurity gas collides with the respective wafers equally and diffuses uniformly. Accordingly deteioration like a solid diffusion source is not generated on the diffusion source, and intermixing of contamination can be also prevented.
JP11416680A 1980-08-20 1980-08-20 Method and device for impurity diffusion Pending JPS5737824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11416680A JPS5737824A (en) 1980-08-20 1980-08-20 Method and device for impurity diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11416680A JPS5737824A (en) 1980-08-20 1980-08-20 Method and device for impurity diffusion

Publications (1)

Publication Number Publication Date
JPS5737824A true JPS5737824A (en) 1982-03-02

Family

ID=14630814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11416680A Pending JPS5737824A (en) 1980-08-20 1980-08-20 Method and device for impurity diffusion

Country Status (1)

Country Link
JP (1) JPS5737824A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245218A (en) * 1984-05-18 1985-12-05 ミテル・コ−ポレ−シヨン Method and apparatus for producing semiconductor element
JPS61112264U (en) * 1984-12-27 1986-07-16
JPS61112261U (en) * 1984-12-27 1986-07-16
JPS61114352U (en) * 1984-12-28 1986-07-19
JPS61114353U (en) * 1984-12-28 1986-07-19
JPS6260947A (en) * 1985-09-10 1987-03-17 Mazda Motor Corp Air-fuel ratio controller for engine

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245218A (en) * 1984-05-18 1985-12-05 ミテル・コ−ポレ−シヨン Method and apparatus for producing semiconductor element
FR2565734A1 (en) * 1984-05-18 1985-12-13 Mitel Corp METHOD AND APPARATUS FOR DIFFUSION OF IMPURITY INTO SEMICONDUCTOR BODY
JPS61112264U (en) * 1984-12-27 1986-07-16
JPS61112261U (en) * 1984-12-27 1986-07-16
JPH041492Y2 (en) * 1984-12-27 1992-01-20
JPH041493Y2 (en) * 1984-12-27 1992-01-20
JPS61114352U (en) * 1984-12-28 1986-07-19
JPS61114353U (en) * 1984-12-28 1986-07-19
JPH0411166Y2 (en) * 1984-12-28 1992-03-19
JPH0411165Y2 (en) * 1984-12-28 1992-03-19
JPS6260947A (en) * 1985-09-10 1987-03-17 Mazda Motor Corp Air-fuel ratio controller for engine

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