JPS56155528A - Method of diffusing impurity into semiconductor substrate - Google Patents

Method of diffusing impurity into semiconductor substrate

Info

Publication number
JPS56155528A
JPS56155528A JP5775780A JP5775780A JPS56155528A JP S56155528 A JPS56155528 A JP S56155528A JP 5775780 A JP5775780 A JP 5775780A JP 5775780 A JP5775780 A JP 5775780A JP S56155528 A JPS56155528 A JP S56155528A
Authority
JP
Japan
Prior art keywords
capsule
diffusion
treated
substrate
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5775780A
Other languages
Japanese (ja)
Inventor
Kiyoshi Takaoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5775780A priority Critical patent/JPS56155528A/en
Publication of JPS56155528A publication Critical patent/JPS56155528A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67386—Closed carriers characterised by the construction of the closed carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl

Abstract

PURPOSE:To reduce the fluctuation of impurity density in, for example, a vacuum diffusion of Al by a method wherein the substrate and a diffusion source are housed in a nonsealed capsule, and the capsule is installed in a hermetic process tube to be heat-treated in vacuum. CONSTITUTION:In the vacuum diffusion of Al, for example, the Si substrate 2, 2'... and the Al evaporation source 3 are housed in the capsule 10 dope-treated in advance by the diffused impurity (Al) and installed in the hermetic process tube dope-treated with the Al. The cylindrical capsule 10 whose both ends are closed is divided into two parts in the axial direction to be made a lower body 10a and a tap body 10b, which are joined as loose as the capsule being not completely sealed from the air. Thereby, the capsule 10 can be made vacuous inside and the vacuum diffusion is performed at the same time when the process tube 1 is exhausted. Thus, the impurity density diffused in the substrate is made uniform and the surface density can be increased as well by limiting the diffusion range of the Al vaporized within the narrow capsule 10.
JP5775780A 1980-05-02 1980-05-02 Method of diffusing impurity into semiconductor substrate Pending JPS56155528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5775780A JPS56155528A (en) 1980-05-02 1980-05-02 Method of diffusing impurity into semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5775780A JPS56155528A (en) 1980-05-02 1980-05-02 Method of diffusing impurity into semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS56155528A true JPS56155528A (en) 1981-12-01

Family

ID=13064741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5775780A Pending JPS56155528A (en) 1980-05-02 1980-05-02 Method of diffusing impurity into semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS56155528A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390822A (en) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト Method of forming p-type doped region in n-type semiconductor
JPH04284624A (en) * 1991-03-13 1992-10-09 Hitachi Ltd Diffusion method of impurities to semiconductor substrate
KR20000012049A (en) * 1998-07-29 2000-02-25 구라우치 노리타카 Zn diffusion method and apparatus to III-V compound semiconductor crystal
WO2013178824A1 (en) * 2012-06-01 2013-12-05 Kgt Graphit Technologie Gmbh Susceptor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6390822A (en) * 1986-09-30 1988-04-21 シーメンス、アクチエンゲゼルシヤフト Method of forming p-type doped region in n-type semiconductor
JPH04284624A (en) * 1991-03-13 1992-10-09 Hitachi Ltd Diffusion method of impurities to semiconductor substrate
KR20000012049A (en) * 1998-07-29 2000-02-25 구라우치 노리타카 Zn diffusion method and apparatus to III-V compound semiconductor crystal
WO2013178824A1 (en) * 2012-06-01 2013-12-05 Kgt Graphit Technologie Gmbh Susceptor
CN104380451A (en) * 2012-06-01 2015-02-25 Kgt石墨科技有限公司 Susceptor
DE102012209278B4 (en) * 2012-06-01 2018-04-12 Kgt Graphit Technologie Gmbh susceptor
US10094016B2 (en) 2012-06-01 2018-10-09 Kgt Graphit Technologie Gmbh Modular tubular susceptor

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