JPS5736830A - Diffusing method for impurity to semiconductor - Google Patents
Diffusing method for impurity to semiconductorInfo
- Publication number
- JPS5736830A JPS5736830A JP11165380A JP11165380A JPS5736830A JP S5736830 A JPS5736830 A JP S5736830A JP 11165380 A JP11165380 A JP 11165380A JP 11165380 A JP11165380 A JP 11165380A JP S5736830 A JPS5736830 A JP S5736830A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- quartz
- diffusion
- lifetime
- placing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 6
- 239000010453 quartz Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To prolong the lifetime of a quartz diffusion tube by placing a diffusion impurity source and a semiconductor substate in a reaction tube, semisealing the tube, placing the tube in a quartz dfiffusion tube in a double structure type and heating and fiffusing under the prescribed pressure in the diffusion tube. CONSTITUTION:A silicon board 8 filling alumunum 13 as a diffusion impurity source are filled in a quartz reaction tube 6 closed at one side, and the tube is then covered with a quartz inner plug 7. The gap between the tube 6 and the plug 7 is 1mm., and the area of the opening is 1.5cm<2>. This tube 6 is inserted into a quartz diffusion tube 12 connected to a vacuum evacuating device 4 at one side, is substituted for nitrogen gas by an inert gas supply device 10, and is diffused and heat treated while evacuating the tube. In this manner, the lifetime of the quartz diffusion tube can be prolonged.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11165380A JPS5736830A (en) | 1980-08-15 | 1980-08-15 | Diffusing method for impurity to semiconductor |
| US06/291,042 US4415385A (en) | 1980-08-15 | 1981-08-07 | Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11165380A JPS5736830A (en) | 1980-08-15 | 1980-08-15 | Diffusing method for impurity to semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5736830A true JPS5736830A (en) | 1982-02-27 |
Family
ID=14566772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11165380A Pending JPS5736830A (en) | 1980-08-15 | 1980-08-15 | Diffusing method for impurity to semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736830A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008228672A (en) * | 2007-03-22 | 2008-10-02 | Mitsubishi Agricult Mach Co Ltd | Combine harvester |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5028752A (en) * | 1973-07-13 | 1975-03-24 |
-
1980
- 1980-08-15 JP JP11165380A patent/JPS5736830A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5028752A (en) * | 1973-07-13 | 1975-03-24 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008228672A (en) * | 2007-03-22 | 2008-10-02 | Mitsubishi Agricult Mach Co Ltd | Combine harvester |
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