JPS6454725A - Heat treating method for compound semiconductor substrate - Google Patents
Heat treating method for compound semiconductor substrateInfo
- Publication number
- JPS6454725A JPS6454725A JP21163887A JP21163887A JPS6454725A JP S6454725 A JPS6454725 A JP S6454725A JP 21163887 A JP21163887 A JP 21163887A JP 21163887 A JP21163887 A JP 21163887A JP S6454725 A JPS6454725 A JP S6454725A
- Authority
- JP
- Japan
- Prior art keywords
- sias
- gaas substrate
- dissociation
- crystal
- oppositely
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To inhibit the dissociation of As, to conduct excellent heat treatment and to activate implanted ions efficiently and simply by arranging an SiAs crystal while being oppositely faced or oppositely contact to a GaAs substrate to be thermally treated and thermally treating the GaAs substrate. CONSTITUTION:The inside of a recessed section 2 in a boat 3 composed of quartz, etc. is filled with a scaly SiAs crystal 4. A GaAs substrate 1 is placed onto the crystal 4 while the main surface 1a of the substrate 1 is brought into contact oppositely with SiAs, inserted into a quartz core tube 5 heated at a proper temperature, and thermally treated in an appropriate atmosphere such as H2 gas, an inert gas, etc. The boat 3 is drawn out and cooled. The dissociation of As in the GaAs substrate is inhibited by the high partial pressure of As generated by the dissociation of SiAs. A high activation rate is acquired particularly in activation heat treatment after ion implantation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211638A JP2737781B2 (en) | 1987-08-26 | 1987-08-26 | Heat treatment method for compound semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211638A JP2737781B2 (en) | 1987-08-26 | 1987-08-26 | Heat treatment method for compound semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6454725A true JPS6454725A (en) | 1989-03-02 |
JP2737781B2 JP2737781B2 (en) | 1998-04-08 |
Family
ID=16609090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62211638A Expired - Fee Related JP2737781B2 (en) | 1987-08-26 | 1987-08-26 | Heat treatment method for compound semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2737781B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335649A (en) * | 2006-06-15 | 2007-12-27 | Mitsubishi Electric Corp | Method of heating silicon carbide semiconductor substrate |
JP2007335650A (en) * | 2006-06-15 | 2007-12-27 | Mitsubishi Electric Corp | Method of heating silicon carbide semiconductor substrate |
JP2009147118A (en) * | 2007-12-14 | 2009-07-02 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63271923A (en) * | 1987-04-28 | 1988-11-09 | Sumitomo Electric Ind Ltd | Heat treatment of compound semiconductor substrate |
-
1987
- 1987-08-26 JP JP62211638A patent/JP2737781B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63271923A (en) * | 1987-04-28 | 1988-11-09 | Sumitomo Electric Ind Ltd | Heat treatment of compound semiconductor substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335649A (en) * | 2006-06-15 | 2007-12-27 | Mitsubishi Electric Corp | Method of heating silicon carbide semiconductor substrate |
JP2007335650A (en) * | 2006-06-15 | 2007-12-27 | Mitsubishi Electric Corp | Method of heating silicon carbide semiconductor substrate |
JP2009147118A (en) * | 2007-12-14 | 2009-07-02 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2737781B2 (en) | 1998-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |