JPS6454725A - Heat treating method for compound semiconductor substrate - Google Patents

Heat treating method for compound semiconductor substrate

Info

Publication number
JPS6454725A
JPS6454725A JP21163887A JP21163887A JPS6454725A JP S6454725 A JPS6454725 A JP S6454725A JP 21163887 A JP21163887 A JP 21163887A JP 21163887 A JP21163887 A JP 21163887A JP S6454725 A JPS6454725 A JP S6454725A
Authority
JP
Japan
Prior art keywords
sias
gaas substrate
dissociation
crystal
oppositely
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21163887A
Other languages
Japanese (ja)
Other versions
JP2737781B2 (en
Inventor
Toshiharu Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62211638A priority Critical patent/JP2737781B2/en
Publication of JPS6454725A publication Critical patent/JPS6454725A/en
Application granted granted Critical
Publication of JP2737781B2 publication Critical patent/JP2737781B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To inhibit the dissociation of As, to conduct excellent heat treatment and to activate implanted ions efficiently and simply by arranging an SiAs crystal while being oppositely faced or oppositely contact to a GaAs substrate to be thermally treated and thermally treating the GaAs substrate. CONSTITUTION:The inside of a recessed section 2 in a boat 3 composed of quartz, etc. is filled with a scaly SiAs crystal 4. A GaAs substrate 1 is placed onto the crystal 4 while the main surface 1a of the substrate 1 is brought into contact oppositely with SiAs, inserted into a quartz core tube 5 heated at a proper temperature, and thermally treated in an appropriate atmosphere such as H2 gas, an inert gas, etc. The boat 3 is drawn out and cooled. The dissociation of As in the GaAs substrate is inhibited by the high partial pressure of As generated by the dissociation of SiAs. A high activation rate is acquired particularly in activation heat treatment after ion implantation.
JP62211638A 1987-08-26 1987-08-26 Heat treatment method for compound semiconductor substrate Expired - Fee Related JP2737781B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211638A JP2737781B2 (en) 1987-08-26 1987-08-26 Heat treatment method for compound semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211638A JP2737781B2 (en) 1987-08-26 1987-08-26 Heat treatment method for compound semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS6454725A true JPS6454725A (en) 1989-03-02
JP2737781B2 JP2737781B2 (en) 1998-04-08

Family

ID=16609090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211638A Expired - Fee Related JP2737781B2 (en) 1987-08-26 1987-08-26 Heat treatment method for compound semiconductor substrate

Country Status (1)

Country Link
JP (1) JP2737781B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335649A (en) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp Method of heating silicon carbide semiconductor substrate
JP2007335650A (en) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp Method of heating silicon carbide semiconductor substrate
JP2009147118A (en) * 2007-12-14 2009-07-02 Mitsubishi Electric Corp Method of manufacturing silicon carbide semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271923A (en) * 1987-04-28 1988-11-09 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271923A (en) * 1987-04-28 1988-11-09 Sumitomo Electric Ind Ltd Heat treatment of compound semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335649A (en) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp Method of heating silicon carbide semiconductor substrate
JP2007335650A (en) * 2006-06-15 2007-12-27 Mitsubishi Electric Corp Method of heating silicon carbide semiconductor substrate
JP2009147118A (en) * 2007-12-14 2009-07-02 Mitsubishi Electric Corp Method of manufacturing silicon carbide semiconductor device

Also Published As

Publication number Publication date
JP2737781B2 (en) 1998-04-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees