JPS6423538A - Method and equipment for manufacturing semiconductor device - Google Patents

Method and equipment for manufacturing semiconductor device

Info

Publication number
JPS6423538A
JPS6423538A JP17904887A JP17904887A JPS6423538A JP S6423538 A JPS6423538 A JP S6423538A JP 17904887 A JP17904887 A JP 17904887A JP 17904887 A JP17904887 A JP 17904887A JP S6423538 A JPS6423538 A JP S6423538A
Authority
JP
Japan
Prior art keywords
substrate
oxygen
opened
evacuation operation
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17904887A
Other languages
Japanese (ja)
Inventor
Hironobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17904887A priority Critical patent/JPS6423538A/en
Publication of JPS6423538A publication Critical patent/JPS6423538A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To clean the surface of a semiconductor and to protect the surface by a method wherein the following are executed in succession and continuously: a process to remove a carbon-based contamination by applying active oxygen to the surface of a substrate; a process to remove oxygen and an oxide by applying active hydrogen; a process to form a surface protective film. CONSTITUTION:A substrate is attached to a substrate holder 3; a gate valve 5a is opened and an evacuation operation is executed. Then, a gate valve 5b is opened; the substrate is transferred to a substrate holder 7 inside a surface treatment chamber 6. After another evacuation operation, high-purity oxygen gas is introduced; in addition, microwaves are introduced; the surface of the substrate is irradiated with active oxygen, ozone or oxygen ions; a carbon-based contamination on the surface of the substrate is removed. Then, the evacuation operation is executed again, the substrate is heated; high-purity hydrogen is introduced; the microwaves are introduced; the surface of the substrate is irradiated with active hydrogen or hydrogen ions; an oxide on the surface of the substrate is reduced and is removed. Then, the substrate is faced to a group V atom evaporation source 11; a vacuum is produced; a shutter 12 is opened; As is evaporated to the surface of the substrate; after that, n-type GaAs is grown. By this setup, it is possible to clean the surface at a temperature of lower than that for crystal growth; while the cleaned surface is protected, the substrate can be transferred to another growth apparatus.
JP17904887A 1987-07-20 1987-07-20 Method and equipment for manufacturing semiconductor device Pending JPS6423538A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17904887A JPS6423538A (en) 1987-07-20 1987-07-20 Method and equipment for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17904887A JPS6423538A (en) 1987-07-20 1987-07-20 Method and equipment for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS6423538A true JPS6423538A (en) 1989-01-26

Family

ID=16059211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17904887A Pending JPS6423538A (en) 1987-07-20 1987-07-20 Method and equipment for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS6423538A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163600A (en) * 1992-11-26 1994-06-10 Nec Corp Field-effect transistor
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
US6228751B1 (en) * 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN105453233A (en) * 2013-08-09 2016-03-30 应用材料公司 Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP2017513216A (en) * 2014-04-01 2017-05-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Method and apparatus for surface treating a substrate

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163600A (en) * 1992-11-26 1994-06-10 Nec Corp Field-effect transistor
US6228751B1 (en) * 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6703264B2 (en) * 1995-09-08 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7393723B2 (en) 1995-09-08 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
EP0813232A2 (en) * 1996-05-15 1997-12-17 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
EP0813232A3 (en) * 1996-05-15 1998-09-02 Nec Corporation Method of reducing the amount of carbon in an interface between an epitaxial film and a Si substrate
US5920795A (en) * 1996-05-15 1999-07-06 Nec Corporation Method for manufacturing semiconductor device
KR20160042010A (en) * 2013-08-09 2016-04-18 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for precleaning a substrate surface prior to epitaxial growth
CN105453233A (en) * 2013-08-09 2016-03-30 应用材料公司 Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP2016528734A (en) * 2013-08-09 2016-09-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Method and apparatus for precleaning a substrate surface prior to epitaxial growth
US10428441B2 (en) 2013-08-09 2019-10-01 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
US10837122B2 (en) 2013-08-09 2020-11-17 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
JP2017513216A (en) * 2014-04-01 2017-05-25 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Method and apparatus for surface treating a substrate
US9960030B2 (en) 2014-04-01 2018-05-01 Ev Group E. Thallner Gmbh Method and device for the surface treatment of substrates
US10867783B2 (en) 2014-04-01 2020-12-15 Ev Group E. Thallner Gmbh Method and device for the surface treatment of substrates
US11901172B2 (en) 2014-04-01 2024-02-13 Ev Group E. Thallner Gmbh Method and device for the surface treatment of substrates

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