JPH01217928A - Treating method for gaas substrate - Google Patents
Treating method for gaas substrateInfo
- Publication number
- JPH01217928A JPH01217928A JP4211888A JP4211888A JPH01217928A JP H01217928 A JPH01217928 A JP H01217928A JP 4211888 A JP4211888 A JP 4211888A JP 4211888 A JP4211888 A JP 4211888A JP H01217928 A JPH01217928 A JP H01217928A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- pure water
- gaas substrate
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 abstract description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 18
- 239000012535 impurity Substances 0.000 abstract description 13
- 150000001875 compounds Chemical class 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 150000001721 carbon Chemical group 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000864 Auger spectrum Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
基板上に化合物半導体層をエピタキシャル成長させる際
の前処理として実施するのに好適なＧａＡｓ基板の処理
方法に関し、
ＧａＡｓ基板表面に於ける炭素不純物の量を低減させ、
そこに良質の化合物半導体層をエピタキシャル成長させ
ることができるように、そして、該ＧａＡｓ基板を用い
て半導体装置を製造した場合の電気的特性が良好である
ようにすることを目的とし、
ＧａＡｓ基板をウェット処理の最終段階で純水の流水中
に浸漬する工程と、次いで、純水の通流を停止して該Ｇ
ａＡｓ基板を純水の静水中に放置し表面に酸化膜を生成
させる工程とを含んでなるよう構成する。[Detailed Description of the Invention] [Summary] A method for treating a GaAs substrate suitable for use as a pre-treatment when epitaxially growing a compound semiconductor layer on the substrate, which reduces the amount of carbon impurities on the surface of the GaAs substrate. ,
Wet the GaAs substrate for the purpose of being able to epitaxially grow a high-quality compound semiconductor layer thereon and to ensure good electrical characteristics when a semiconductor device is manufactured using the GaAs substrate. At the final stage of treatment, the G
The method includes a step of leaving the aAs substrate in still water of pure water to form an oxide film on the surface.
本発明は、基板上に化合物半導体層をエピタキシャル成
長させる際の前処理として実施するのに好適なＧａＡｓ
基板の処理方法に関する。The present invention provides a method for using GaAs suitable for pretreatment when epitaxially growing a compound semiconductor layer on a substrate.
The present invention relates to a method for processing a substrate.
現在、例えば、高電子移動度トランジスタ（ｈｉｇｈ
ｅｌｅｃｔｒｏｎ ｍｏｂｉｌｉｔｙｔｒａｎｓｉ
ｓｔｏｒ：ＨＥＭＴ）をはじめとする超高速化合物半導
体装置、或いは、光半導体装置などを製造する際、例え
ば、分子線エピタキシャル成長（ｍｏｌｅｃｕｌａｒ
ｂｅａｍ ｅｐｉｔａｘｙ：ＭＢＥ）法や有機金属
化学気相成長（ｍｅｔａｌｏｒｇａｎｉｃ ｃｈｅｍ
ｉｃａｌｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ：ＭＯ
ＣＶＤ）法などを適用し、ＧａＡｓ基板にＧａＡｓ層や
ＡｌＧａＡｓ層をエピタキシャル成長させることが行わ
れている。Currently, for example, high electron mobility transistors (high
electron mobilitytransi
When manufacturing ultra-high speed compound semiconductor devices such as stor (HEMT) or optical semiconductor devices, for example, molecular beam epitaxial growth (molecular beam epitaxial growth) is used.
beam epitaxy (MBE) method and metalorganic chemical vapor deposition (metalorganic chem
icalvapor position：MO
A GaAs layer or an AlGaAs layer is epitaxially grown on a GaAs substrate by applying a CVD method or the like.
ところで、その際、重要なことはＧａＡｓ基板の表面に
付着している汚染物質を充分に除去することであり、そ
のようにしないと、良質のエピタキシャル成長化合物半
導体層は得られない。By the way, in this case, it is important to sufficiently remove contaminants adhering to the surface of the GaAs substrate; otherwise, a good quality epitaxially grown compound semiconductor layer cannot be obtained.
従来は、ＧａＡｓ基板に対し、
脱脂洗浄−軽度のエツチング−水洗−真空中にてＡｓビ
ームを照射しつつ６００〜６５０〔℃〕の加熱、
なる、所謂、サーマル・クリーニングを行うのが一般的
である。Conventionally, it has been common practice to perform so-called thermal cleaning on GaAs substrates by degreasing, mild etching, washing with water, and heating to 600 to 650 [°C] while irradiating with an As beam in a vacuum. be.
前記したようなサーマル・クリーニングを行った場合、
ＧａＡｓ１板表面の酸化膜は除去されるが、炭素を主と
する不純物は除去しきれず、従って、エピタキシャル成
長された化合物半導体層とＧａＡｓ基板との界面に空乏
層が生成され、電気的特性が低下する。If you perform thermal cleaning as described above,
Although the oxide film on the surface of the GaAs 1 plate is removed, impurities mainly consisting of carbon cannot be removed completely, and therefore a depletion layer is generated at the interface between the epitaxially grown compound semiconductor layer and the GaAs substrate, degrading the electrical characteristics. .
本発明は、ＧａＡｓ基板表面の炭素不純物の量を低減さ
せ、そこに良質の化合物半導体層をエピタキシャル成長
させることができるように、そして、半導体装置を製造
した場合の電気的特性が良好であるようにする。The present invention aims to reduce the amount of carbon impurities on the surface of a GaAs substrate so that a high-quality compound semiconductor layer can be epitaxially grown thereon, and to have good electrical characteristics when a semiconductor device is manufactured. do.
本発明では、純水に対するＧａＡｓの特性を利用してい
る。The present invention utilizes the characteristics of GaAs with respect to pure water.
即ち、ＧａＡｓには極性がある為、純水に対し ′て
次のような特性を示す。That is, since GaAs has polarity, it exhibits the following characteristics with respect to pure water.
（１）流水中でエツチングされる。尚、その場合に於け
るエツチング・レートは約１〜１．５ 〔人／分〕程度
である。(1) Etched in running water. In this case, the etching rate is about 1 to 1.5 [people/minute].
（２）静水中で表面にＧａ酸化膜が生成される。(2) A Ga oxide film is generated on the surface in still water.
このようなことから、通常の基板処理（ウェット処理）
の最終段階で純水の流水中にＧａＡｓ基板を浸漬し、例
えば３０〔分〕乃至ｌ 〔時間〕を経てから純水の通流
を停止し、表面に厚さ例えば５０〔人〕のＧａ酸化膜を
意図的に生成させる。For this reason, normal substrate processing (wet processing)
In the final step, the GaAs substrate is immersed in flowing pure water, and after a period of, for example, 30 [minutes] to 1 [hour], the flow of pure water is stopped, and the GaAs substrate is coated with Ga oxide to a thickness of, for example, 50 [hours]. Intentionally generate a film.
尚、「ウェット処理」とは、通常、アセトン、トリクロ
ルエチレン、エチル・アルコールなどに依る有機物の脱
脂、或いは、硫酸、過酸化水素水、塩酸、アンモニアな
ど酸或いはアルカリ性水溶液に依って金属不純物や研磨
ダメージ層の除去を行うエツチングなどを含む工程を指
称している。In addition, "wet processing" usually refers to degreasing of organic substances using acetone, trichlorethylene, ethyl alcohol, etc., or removal of metal impurities and polishing using acid or alkaline aqueous solutions such as sulfuric acid, hydrogen peroxide, hydrochloric acid, ammonia, etc. This refers to a process that includes etching and the like to remove damaged layers.
前記のような処理をした場合、純水の純度は極めて高い
ことから、酸化膜／基板の界面や酸化膜中には炭素など
の不純物が殆ど存在しない。When the above-mentioned treatment is performed, since the purity of the pure water is extremely high, impurities such as carbon are hardly present at the oxide film/substrate interface or in the oxide film.
この処理を施したＧａＡｓ基板は、大気中を介してＭＢ
Ｅ装置などエピタキシャル成長装置の真空内に搬送され
る。従って、その過程で前記Ｇａ酸化膜表面に炭素不純
物が被着する可能性はあるが、該Ｇａ酸化膜は自然酸化
膜に比較して厚いので、前記真空中でＧａ酸化膜を昇華
させる過程、即ち、サーマル・クリーニングの過程で容
易に除去することができる。The GaAs substrate subjected to this treatment is exposed to MB through the atmosphere.
It is transported into the vacuum of an epitaxial growth apparatus such as an E apparatus. Therefore, carbon impurities may adhere to the surface of the Ga oxide film during this process, but since the Ga oxide film is thicker than a natural oxide film, the process of sublimating the Ga oxide film in vacuum, That is, it can be easily removed during thermal cleaning.
前記したところから、本発明に依るＧａＡｓ層板の処理
方法に於いては、ＧａＡｓ基板をウェット処理の最終段
階で純水の流水中に浸漬する工程と、次いで、純水の通
流を停止して該ＧａＡｓ基板を純水の静水中に放置し表
面に酸化膜を生成させる工程とを含んでいる。From the above, the method for processing a GaAs layer plate according to the present invention includes a step of immersing the GaAs substrate in flowing pure water at the final stage of wet processing, and then stopping the flow of pure water. The method includes a step of leaving the GaAs substrate in still water of pure water to form an oxide film on the surface.
前記手段を採ることに依り、ＧａＡｓ基板表面の残留炭
素不純物は激減し、従って、その上に化合物半導体層を
エピタキシャル成長させた場合、その界面がら空乏層が
拡がるなどの問題は解消され、電気的特性が良好な半導
体装置を製造することができ、そして、そのような処理
を行うに際して必要とされる技術は、半導体分野に於い
て、技術と呼ぶ程のこともないような極めて簡単な手段
であるから、その実施は容易である。By taking the above measures, residual carbon impurities on the surface of the GaAs substrate are drastically reduced, and therefore, when a compound semiconductor layer is epitaxially grown on the GaAs substrate, problems such as the depletion layer spreading from the interface are solved, and the electrical characteristics are improved. can produce good semiconductor devices, and the technology required to perform such processing is an extremely simple means that cannot even be called a technology in the semiconductor field. Therefore, its implementation is easy.
第１図は本発明一実施例に依って処理したＧａＡｓ基板
のオージェ・スペクトル（Ａｕｇｅｒｓｐｅｃｔｒｕｍ
）を表す線図、第２図及び第３図は本発明一実施例と比
較する為の処理を施したＧａＡｓ基板のオージェ・スペ
クトルを表す線図である。FIG. 1 shows the Auger spectrum of a GaAs substrate processed according to an embodiment of the present invention.
), and FIGS. 2 and 3 are diagrams representing Auger spectra of a GaAs substrate subjected to processing for comparison with one embodiment of the present invention.
第１図に見られる結果を得た本発明一実施例としては、
通常のウェット処理を施したＧａＡｓ基板を純水の流水
中に約６０Ｃ分〕間浸漬した後、その静水中に１０〔時
間〕放置したものであり、ここで純水とは＞１８（ＭΩ
〕のものを相称している。An example of the present invention that obtained the results shown in FIG.
A GaAs substrate that has undergone normal wet treatment is immersed in running pure water for about 60C minutes, and then left in still water for 10 hours, where pure water is >18 (MΩ
) are synonymous with each other.
第２図に見られる結果を得た実験例としては、通常のウ
ェット処理を施したＧａＡｓ基板を純水の流水中に１０
〔時間〕浸漬したものである。As an example of an experiment that produced the results shown in Figure 2, a GaAs substrate subjected to normal wet treatment was placed in running pure water for 10 min.
[Time] Soaked.
第３図に見られる結果を得た実験例としては、通常のウ
ェット処理を施したままのＧａＡｓ基板に関するもので
ある。The experimental example that yielded the results shown in FIG. 3 concerns a GaAs substrate that has been subjected to normal wet processing.
各図に於いて、Ｃｃは炭素濃度、Ｃ０は酸素濃度、ＣＧ
ａはＧａ濃度、ＣＡｓはＡｓ濃度をそれぞれ示している
。In each figure, Cc is carbon concentration, C0 is oxygen concentration, CG
a indicates the Ga concentration, and CAs indicates the As concentration.
第３図に見られる実験例、即ち、従来技術に依る実験例
では、炭素の量が大変多く、これを除去することは著し
く困難である。また、第２図に見られる実験例、即ち、
流水中に１０（時間〕浸漬した実験例に於いても、表面
に酸素及び炭素が付着しているが、これは大気中に露出
させたことに依るものであり、これを除去することは困
難である。In the experimental example shown in FIG. 3, ie, the experimental example based on the prior art, the amount of carbon is very large and it is extremely difficult to remove it. In addition, the experimental example shown in FIG.
Even in the experimental example where the sample was immersed in running water for 10 hours, oxygen and carbon were attached to the surface, but this was due to exposure to the atmosphere, and it was difficult to remove this. It is.
第１図に見られる本発明一実施例に依った場合では、Ｇ
ａＡｓ基板表面にＧａ酸化膜の生成が認められ、そして
、炭素の量が著しく少ないが、これはＧａ酸化膜表面に
炭素が付着し難いからである。このような処理を施した
ＧａＡｓ基板を真空中で加熱してＧａ酸化膜を昇華させ
ると、炭素不純物が表面のみに存在していることとＧａ
酸化膜が充分に厚いこととが相俟って、化合物半導体層
成長直前のＧａＡｓ基板表面に於ける残留炭素不純物の
量を著しく低減させることが可能である。In accordance with one embodiment of the invention shown in FIG.
Formation of a Ga oxide film was observed on the surface of the aAs substrate, and the amount of carbon was extremely small, but this was because carbon was difficult to adhere to the surface of the Ga oxide film. When a GaAs substrate subjected to such treatment is heated in a vacuum to sublimate the Ga oxide film, it is found that carbon impurities exist only on the surface and that the Ga oxide film is sublimated.
Combined with the fact that the oxide film is sufficiently thick, it is possible to significantly reduce the amount of residual carbon impurities on the surface of the GaAs substrate immediately before the compound semiconductor layer is grown.
本発明に依るＧａＡｓ基板の処理方法に於いては、Ｇａ
Ａｓ基板をウェット処理の最終段階で純水の流水中に浸
漬する工程と、その純水の通流を停止して該ＧａＡｓ基
板を純水の静水中に放置し表面に酸化膜を生成させる工
程とを含んでいる。In the method for processing a GaAs substrate according to the present invention, Ga
A step of immersing the As substrate in flowing pure water at the final stage of wet treatment, and a step of stopping the flow of pure water and leaving the GaAs substrate in still water of pure water to form an oxide film on the surface. Contains.
前記手段を採ることに依り、ＧａＡｓ基板表面の残留炭
素不純物は激減し、従って、その上に化合物半導体層を
エピタキシャル成長させた場合、その界面がら空乏層が
拡がるなどの問題は解消され、電気的特性が良好な半導
体装置を製造することができ、そして、そのような処理
を行うに際して必要とされる技術は、半導体分野に於い
て、技術と呼ぶ程のこともないような極めて簡単な手段
であるから、その実施は容易である。By taking the above measures, residual carbon impurities on the surface of the GaAs substrate are drastically reduced, and therefore, when a compound semiconductor layer is epitaxially grown on the GaAs substrate, problems such as the depletion layer spreading from the interface are solved, and the electrical characteristics are improved. can produce good semiconductor devices, and the technology required to perform such processing is an extremely simple means that cannot even be called a technology in the semiconductor field. Therefore, its implementation is easy.
第１図は本発明一実施例に依って処理したＧａＡｓ基板
のオージェ・スペクトルを表す線図、第２図及び第３図
は本発明一実施例と比較する為の処理を施したＧａＡｓ
基板のオージェ・スペクトルを表す線図である。
図に於いて、Ｃｃは炭素濃度、Ｃ０は酸素濃度、ＣＧａ
はＧａ濃度、ＣＡｔはＡ ｓ ｔｌｊ度をそれぞれ示し
ている。
特許出願人 富士通株式会社
代理人弁理士 相 谷 昭 司
代理人弁理士 渡 邊 弘 −FIG. 1 is a diagram showing the Auger spectrum of a GaAs substrate treated according to an embodiment of the present invention, and FIGS. 2 and 3 are diagrams of GaAs substrates treated for comparison with an embodiment of the present invention.
FIG. 2 is a diagram showing an Auger spectrum of a substrate. In the figure, Cc is carbon concentration, C0 is oxygen concentration, CGa
indicates the Ga concentration, and CAt indicates the A s tlj degree, respectively. Patent applicant: Fujitsu Ltd. Representative Patent Attorney Shoji Aitani Representative Patent Attorney Hiroshi Watanabe −
Claims (1)
中に浸漬する工程と、 次いで、純水の通流を停止して該ＧａＡｓ基板を純水の
静水中に放置し表面に酸化膜を生成させる工程と を含んでなることを特徴とするＧａＡｓ基板の処理方法
。[Claims] A step of immersing the GaAs substrate in flowing pure water at the final stage of wet processing, and then stopping the flow of pure water and leaving the GaAs substrate in still water of pure water to remove the surface of the GaAs substrate. 1. A method for processing a GaAs substrate, comprising the step of: forming an oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4211888A JP2608448B2 (en) | 1988-02-26 | 1988-02-26 | Processing method of GaAs substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4211888A JP2608448B2 (en) | 1988-02-26 | 1988-02-26 | Processing method of GaAs substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01217928A true JPH01217928A (en) | 1989-08-31 |
| JP2608448B2 JP2608448B2 (en) | 1997-05-07 |
Family
ID=12627035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4211888A Expired - Lifetime JP2608448B2 (en) | 1988-02-26 | 1988-02-26 | Processing method of GaAs substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2608448B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053581A (en) * | 2006-08-28 | 2008-03-06 | Osaka Univ | Oxide forming method |
| JP2010027853A (en) * | 2008-07-18 | 2010-02-04 | Sumitomo Electric Ind Ltd | Method for manufacturing group iii-v compound semiconductor substrate, method for manufacturing epitaxial wafer, group iii-v compound semiconductor substrate, and epitaxial wafer |
-
1988
- 1988-02-26 JP JP4211888A patent/JP2608448B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053581A (en) * | 2006-08-28 | 2008-03-06 | Osaka Univ | Oxide forming method |
| JP2010027853A (en) * | 2008-07-18 | 2010-02-04 | Sumitomo Electric Ind Ltd | Method for manufacturing group iii-v compound semiconductor substrate, method for manufacturing epitaxial wafer, group iii-v compound semiconductor substrate, and epitaxial wafer |
| JP4697272B2 (en) * | 2008-07-18 | 2011-06-08 | 住友電気工業株式会社 | III-V compound semiconductor substrate manufacturing method and epitaxial wafer manufacturing method |
| DE102009033648B4 (en) | 2008-07-18 | 2024-04-18 | Sumitomo Electric Industries, Ltd. | Method for producing a III-V compound semiconductor substrate, method for producing an epitaxial wafer, III-V compound semiconductor substrate and epitaxial wafer |
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| Publication number | Publication date |
|---|---|
| JP2608448B2 (en) | 1997-05-07 |
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