JPS55151339A - Quartz tube for heat treatment - Google Patents

Quartz tube for heat treatment

Info

Publication number
JPS55151339A
JPS55151339A JP6107879A JP6107879A JPS55151339A JP S55151339 A JPS55151339 A JP S55151339A JP 6107879 A JP6107879 A JP 6107879A JP 6107879 A JP6107879 A JP 6107879A JP S55151339 A JPS55151339 A JP S55151339A
Authority
JP
Japan
Prior art keywords
tube
silicon film
quartz tube
retain
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6107879A
Other languages
Japanese (ja)
Other versions
JPS6133256B2 (en
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6107879A priority Critical patent/JPS55151339A/en
Publication of JPS55151339A publication Critical patent/JPS55151339A/en
Publication of JPS6133256B2 publication Critical patent/JPS6133256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the reaction of a quartz tube with alkaline content and to retain the cleaning solution in the tube constantly by forming a silicon coating on the inner wall of the tube used when heat treating the semiconductor substrate. CONSTITUTION:A quartz tube 1 is heated in N2 atmosphere to purge it. Then, it is vapor etched in Cl2, again purged, and a silicon film 1-1 having a thickness of 20-40mum is formed on the inner surface of the tube 1 by means of hydrogen reduction with silicon tetrachloride, hydrogen reduction with trichlorosilane, or pyrolysis with monosilane, etc. The tube 1 thus treated is used to some degree, and Cl2 gas is flowed thereto when proceeding the contamination of the inner wall of the tube to remove the contaminated silicon film to form a new silicon film by the above method. In this manner, the tube itself is prevented from contaminating to retain the cleaning degree of the tube constantly.
JP6107879A 1979-05-16 1979-05-16 Quartz tube for heat treatment Granted JPS55151339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6107879A JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6107879A JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Publications (2)

Publication Number Publication Date
JPS55151339A true JPS55151339A (en) 1980-11-25
JPS6133256B2 JPS6133256B2 (en) 1986-08-01

Family

ID=13160726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6107879A Granted JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Country Status (1)

Country Link
JP (1) JPS55151339A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Manufacturing device for semiconductor device
WO1999036589A1 (en) * 1998-01-13 1999-07-22 Applied Materials, Inc. Method of cleaning a cvd cold-wall chamber and exhaust lines
US6559421B1 (en) 1999-10-29 2003-05-06 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029166A (en) * 1973-07-17 1975-03-25
JPS5150576A (en) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co HANDOTAIKIBANJONOSANKAKEISOSOKISOSEICHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029166A (en) * 1973-07-17 1975-03-25
JPS5150576A (en) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co HANDOTAIKIBANJONOSANKAKEISOSOKISOSEICHOHO

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Manufacturing device for semiconductor device
JPH029445B2 (en) * 1982-03-31 1990-03-02 Fujitsu Ltd
WO1999036589A1 (en) * 1998-01-13 1999-07-22 Applied Materials, Inc. Method of cleaning a cvd cold-wall chamber and exhaust lines
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6559421B1 (en) 1999-10-29 2003-05-06 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor
US6646227B2 (en) 1999-10-29 2003-11-11 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor
US6897409B2 (en) 1999-10-29 2005-05-24 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor

Also Published As

Publication number Publication date
JPS6133256B2 (en) 1986-08-01

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